Datasheet > CE3520K3-C1

CE3520K3-C1

更新时间： 2024-11-02 01:16:51

品牌	Logo	应用领域
CEL		/
页数	文件大小	规格书
8页	748K
描述
20 GHz Super Low Noise FET in Hollow Plastic PKG

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中文翻译

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数据手册
替代型号

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CE3520K3-C1 数据手册

RF Low Noise FET

CE3520K3

20 GHz Super Low Noise FET in Hollow Plastic PKG

DESCRIPTION

PACKAGE



Super Low Noise and High Gain



Micro-X plastic package



Hollow (Air cavity) Plastic package

FEATURES



Super Low noise figure and high associated gain:

NF = 0.55 dB TYP., Ga = 13.8 dB TYP.

@V_DS= 2 V, I_D= 10 mA, f = 20 GHz

APPLICATIONS



DBS LNB gain-stage, Mix-stage

Low noise amplifier for microwave

communication systems



ORDERING INFORMATION

Part Number

CE3520K3

Order Number

CE3520K3-C1

Package

Micro-X plastic

package

Marking

Description

• Embossed tape 8 mm wide

• Pin 4 (Gate) faces the

perforation side of the tape

• MOQ 10 kpcs/reel

This document is subject to change without notice.

Date Published: July 2016

CDS-0019-04 (Issue A)

12 3 4 5 6 7 8

中文翻译

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CE3520K3-C1 替代型号

型号	品牌	替代类型	描述	数据表
CE3520K3	CEL	完全替代	20 GHz Super Low Noise FET in Hollow Plastic PKG

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