Datasheet > CE3521M4-C2

CE3521M4-C2

更新时间： 2024-11-02 01:16:51

品牌	Logo	应用领域
CEL		/
页数	文件大小	规格书
8页	762K
描述
20 GHz Low Noise FET in Dual Mold Plastic PKG

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中文翻译

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数据手册
替代型号

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CE3521M4-C2 数据手册

RF Low Noise FET

CE3521M4

20 GHz Low Noise FET in Dual Mold Plastic PKG

DESCRIPTION

PACKAGE



Low Noise and High Gain



Flat-lead 4-pin thin-type super minimold package



Original Dual Mold Plastic package

FEATURES



Low noise figure and high associated gain:

NF = 0.70 dB TYP., Ga = 11.9 dB TYP.

@V_DS= 2 V, I_D= 10 mA, f = 20 GHz

APPLICATIONS



DBS LNB gain-stage, Mix-stage

Low noise amplifier for microwave

communication systems



ORDERING INFORMATION

Part Number

CE3521M4

Order Number

CE3521M4-C2

Package

Flat-lead 4-pin

thin-type super

minimold

Marking

C04

Description

• Embossed tape 8 mm wide

• Pin 1 (source), Pin 2 (drain)

face the perforation side of

the tape

package

• MOQ 15 kpcs/reel

This document is subject to change without notice.

Date Published: July 2016

CDS-0020-04 (Issue A)

12 3 4 5 6 7 8

中文翻译

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CE3521M4-C2 替代型号

型号	品牌	替代类型	描述	数据表
CE3521M4	CEL	完全替代	20 GHz Low Noise FET in Dual Mold Plastic PKG

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