Datasheet > CE3524K3

CE3524K3

更新时间： 2024-09-27 01:16:51

品牌	Logo	应用领域
CEL		/
页数	文件大小	规格书
8页	812K
描述
24GHz Super Low Noise FET in Hollow Plastic PKG

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中文翻译

获取价格

数据手册

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CE3524K3 数据手册

PRELIMINARY DATASHEET

RF Low Noise FET

CE3524K3

24GHz Super Low Noise FET in Hollow Plastic PKG

DESCRIPTION

PACKAGE



Super Low Noise and High Gain



Micro-X plastic package



Hollow (Air cavity) Plastic package

FEATURES



Super Low noise figure and high associated gain:

NF = 0.84dB TYP., Ga = 13.4dB TYP.

@V_DS= 2V, I_D= 10mA, f = 24GHz

APPLICATIONS



DBS LNB gain-stage, Mix-stage

Low noise amplifier for microwave

communication systems



ORDERING INFORMATION

Part Number

CE3524K3

Order Number

CE3524K3-C1

Package

Micro-X plastic

package

Marking

TBD

Description

• Embossed tape 8 mm wide

• Pin 4 (Gate) faces the

perforation side of the tape

• MOQ 10 kpcs/reel

This document is subject to change without notice.

Date Published: October 2016

CDS-0036-01 (Issue A)

12 3 4 5 6 7 8

中文翻译

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