Datasheet > CDSV6-56-G_12

CDSV6-56-G_12

更新时间： 2024-11-16 07:19:27

品牌	Logo	应用领域
上华 - COMCHIP		二极管开关
页数	文件大小	规格书
2页	66K
描述
SMD Switching Diode Arrays

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数据手册

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CDSV6-56-G_12 数据手册

SMD Switching Diode Arrays

CDSV6-56-G

Forward Current: 0.15A

Reverse Voltage: 75V

RoHS Device

SOT-363

Features

-Fast switching speed.

0.087(2.20)

0.071(1.80)

-Ultra small surface mount package.

-For general purpose swicthing applications.

-High conductance.

0.053(1.35)

0.045(1.15)

0.006(0.15)

0.003(0.08)

0.056(1.40)

0.047(1.20)

0.044(1.10)

0.035(0.90)

0.096(2.45)

0.085(2.15)

Marking: KJC

Diagram:

0.004(0.10)max

0.014(0.35)

0.006(0.15)

0.010(0.25)min

Dimensions in inches and (millimeters)

Maximum Ratings (at TA=25°C unless otherwise noted)

Symbol

Parameter

Limits

Unit

Peak repetitive peak reverse voltage

Working peak reverse voltage

DC blocking voltage

VRRM

VRWM

Forward continuous current

IFM

300

150

Averaged rectified output current

Non-repetitive peak forward surge current

@t=1.0μS

@t=1.0S

2.0

1.0

IFSM

Power dissipation

RθJA

200

625

Thermal resistance, junction to ambient air

Operation junction temperature

Storage temperature range

C/W

^OC

150

TSTG

-65 ~ +150

Electrical Characteristics (at TA=25°C unless otherwise noted)

Symbol

Typ

Parameter

Conditions

Min

Max Unit

Reverse breakdown voltage

IR=2.5μA

V(BR)R

IF=1mA

VF1

VF2

VF3

VF4

0.715

0.855

IF=10mA

IF=50mA

IF=150mA

Forward voltage

1.0

1.25

VR=20V

VR=75V

IR1

IR2

2.5

μA

Reverse leakage current

Capacitance between terminals

Reverse recovery time

VR=0V, f=1.0MHz

trr

IF=IR=10mA, Irr=0.1×IR, RL=100Ω

REV:A

Page 1

QW-B0033

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