Datasheet > CDSW19-G_12

CDSW19-G_12

更新时间： 2024-11-16 07:19:27

品牌	Logo	应用领域
上华 - COMCHIP		二极管开关
页数	文件大小	规格书
2页	81K
描述
SMD Switching Diode

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中文翻译

获取价格

数据手册

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CDSW19-G_12 数据手册

SMD Switching Diode

CDSW19-G/20-G/21-G

High Speed

RoHS Device

SOD-123

Features

-Fast Switching Speed

0.110 (2.80)

0.098 (2.50)

-Surface Mount Package Ideally Suited for

Automatic Insertion

0.028 (0.70)

0.019 (0.50)

0.071 (1.80)

0.055 (1.40)

0.154 (3.90)

0.141 (3.60)

-For General Purpose Switching Applications

Mechanical data

-Case: SOD-123, Molded Plastic

0.008 (0.20)max

0.016 (0.40)min

0.053 (1.35)

0.037 (0.95)

-Terminals: Solderable per MIL-STD-202, Method

208

0.005 (0.12)max

-Weight: 0.01 gram(approx.).

Dimensions in inches and (millimeters)

Maximum Rating (at Ta=25°C unless otherwise noted)

Symbol

Parameter

CDSW19-G

CDSW20-G

CDSW21-G

Unit

Non-Repetitive peak reverse voltage

VRM

120

200

250

Peak repetitive peak reverse voltage

Working peak reverse voltage

DC blocking voltage

VRRM

VRWM

100

150

200

141

VR(RMS)

IFM

RMS reverse voltage

106

400

Forward continuous current

Average rectified output current

200

2.5

0.5

Peak forward surge current

@1.0mS

@1.0S

IFSM

IFRM

625

Repetitive peak forward current

Power dissipation

250

500

C/W

Thermal Resistance (Junction to ambient)

Storage temperature

TSTG

-65 ~ +150

Electrical Characteristics (at Ta=25°C unless otherwise noted)

Parameter

Conditions

Symbol

Typ

Min

Max Unit

IF = 0.1 A

IF = 0.2 A

1.0

Forward voltage

1.25

CDSW19-G VR=100 V

CDSW20-G VR=150 V

CDSW21-G VR=200 V

0.1

Reverse current

Capacitance between terminals

Reverse recovery time

f = 1 MHZ, VR=0V

IF = IR=30 mA, RL =100 Ω, Irr = 0.1 X IR

tRR

REV:A

Page 1

QW-B0018

中文翻译

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