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CDSV6-756-G_12 PDF预览

CDSV6-756-G_12

更新时间: 2024-11-16 07:19:27
品牌 Logo 应用领域
上华 - COMCHIP 二极管开关
页数 文件大小 规格书
2页 66K
描述
SMD Switching Diode Arrays

CDSV6-756-G_12 数据手册

 浏览型号CDSV6-756-G_12的Datasheet PDF文件第2页 
SMD Switching Diode Arrays  
CDSV6-756-G  
Forward Current: 0.15A  
Reverse Voltage: 75V  
RoHS Device  
Features  
SOT-363  
-Fast switching speed.  
0.087(2.20)  
0.071(1.80)  
-Ultra small surface mount package.  
-For general purpose swicthing applications.  
-High conductance.  
0.053(1.35)  
0.045(1.15)  
0.006(0.15)  
0.003(0.08)  
0.056(1.40)  
0.047(1.20)  
0.044(1.10)  
0.035(0.90)  
Marking: KCA  
Diagram:  
0.096(2.45)  
0.085(2.15)  
C1  
A1  
A1  
C2  
C2  
0.004(0.10)max  
0.014(0.35)  
0.006(0.15)  
0.010(0.25)min  
Dimensions in inches and (millimeters)  
A2  
Maximum Ratings (at TA=25°C unless otherwise noted)  
Symbol  
Parameter  
Limits  
Unit  
Peak repetitive peak reverse voltage  
Working peak reverse voltage  
DC blocking voltage  
VRRM  
VRWM  
VR  
75  
V
Forward continuous current  
IFM  
IO  
300  
150  
mA  
mA  
Averaged rectified output current  
Non-repetitive peak forward surge current  
@t=1.0μS  
@t=1.0S  
2.0  
1.0  
IFSM  
A
Power dissipation  
PD  
RθJA  
TJ  
200  
625  
mW  
O
Thermal resistance, junction to ambient air  
Operation junction temperature  
Storage temperature range  
C/W  
OC  
OC  
150  
TSTG  
-65 ~ +150  
Electrical Characteristics (at TA=25°C unless otherwise noted)  
Symbol  
Typ  
Parameter  
Conditions  
Min  
Max Unit  
Reverse breakdown voltage  
IR=2.5μA  
V(BR)R  
75  
V
IF=1mA  
0.715  
0.855  
IF=10mA  
IF=50mA  
IF=150mA  
Forward voltage  
VF  
IR  
V
1.000  
1.250  
Reverse leakage current  
VR=75V  
VR=20V  
2.5  
0.025  
μA  
Junction capacitance  
Reverse recovery time  
VR=0V, f=1.0MHz  
CT  
trr  
2
4
pF  
nS  
IF=IR=10mA, Irr=0.1×IR, RL=100Ω  
REV:A  
Page 1  
QW-B0036  

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