Datasheet > CDF7621-000

CDF7621-000

更新时间： 2024-10-31 23:13:51

品牌	Logo	应用领域
阿尔法 - ALPHA		肖特基二极管
页数	文件大小	规格书
3页	299K
描述
Silicon Schottky Diode Chips

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CDF7621-000 数据手册

Silicon Schottky Diode Chips

Features

I For Detector and Mixer Applications

I Low Capacitance for Usage Beyond 40 GHz

I ZBD and Low Barrier Designs

I P-Type and N-Type Junctions

I Large Bond Pad Chip Design

Description

Alpha’s product line of silicon Schottky diode chips are

intended for use as detector and mixer devices in hybrid

integrated circuits at frequencies from below 100 MHz to

higher than 40 GHz. Alpha’s “Universal Chip” design

features a 4 mil diameter bond pad that is offset from the

semiconductor junction preventing damage to the active

junction as a result of wire bonding.

In a detector circuit operating at zero bias, depending on

the video load impedance, a ZBD device with R_Vless than

10 kΩ may be more sensitive than a low barrier diode with

R_Vgreater than 100 kΩ. Applying forward bias reduces

the diode video resistance as shown in Figure 2. Lower

video resistance also increases the video bandwidth but

does not increase voltage sensitivity, as shown in

Figure 3. Biased Schottky diodes have better temperature

stability and also may be used in temperature

compensated detector circuits.

As power-sensing detectors, these Schottky diode chips

all have the same voltage sensitivity so long as the output

video impedance is much higher than the video

resistance of the diode. Figure 1 shows the expected

detected voltage sensitivity as a function of RF source

impedance in an untuned circuit. Note that sensitivity is

substantially increased by transforming the source

impedance from 50 Ω to higher values. Maximum

sensitivity occurs when the source impedance equals the

video resistance.

P-type Schottky diodes generate lower 1/F noise and are

preferred for Doppler mixers and biased detector

applications.The bond pad for the P-type Schottky diode

is the cathode. N-type Schottky diodes have lower parasitic

resistance, R_S, and will perform with lower conversion loss

in mixer circuits. The bond pad for the N-type Schottky

diode is the anode.

Electrical Specifications at 25°C

C_J

R_T

V_F@ 1 mA

(mV)

V_B

R_V@ Zero Bias

Junction

Type

Outline

Drawing

Part Number

Barrier

(pF)

Max.

0.25

0.15

0.10

0.15

0.10

0.30

(Ω)

Max.

(V)

(kΩ)

Min.–Max.

135–240

150–300

275–375

250–350

270–350

240–300

Min.

Typ.

5.5

CDC7630-000

CDC7631-000

CDB7619-000

CDB7620-000

CDF7621-000

CDF7623-000

ZBD

Low

526-006

526-011

7.2

735

537

680

245

1. C_Jfor low barrier diodes specified at 0 V. C_Jfor ZBDs specified at 0.15 V

reverse bias.

2. R_Tis the slope resistance at 10 mA. R_SMax. may be calculated from:

R_S= R_T- 2.6 x N.

3. V_Bfor low barrier diodes is specified at 10 µA. V_Bfor ZBDs is specified

at 100 µA.

Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email sales@alphaind.com • www.alphaind.com

Specifications subject to change without notice. 8/01A

12 3

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与CDF7621-000相关器件

型号	品牌	获取价格	描述	数据表
CDF7621-108	SKYWORKS	获取价格	Mixer Diode, Silicon, ROHS COMPLIANT, HERMETIC SEALED PACKAGE-2
CDF7621-526-001	SKYWORKS	获取价格	Mixer Diode, Low Barrier, K Band, Silicon
CDF7623	SKYWORKS	获取价格	Diode,
CDF7623-000	SKYWORKS	获取价格	Silicon Schottky Diode Chips
CDF7623-000	ALPHA	获取价格	Silicon Schottky Diode Chips
CDF7623-108	SKYWORKS	获取价格	Mixer Diode, Silicon, ROHS COMPLIANT, HERMETIC SEALED PACKAGE-2
CDF7623-526-001	SKYWORKS	获取价格	Mixer Diode, Low Barrier, X Band, Silicon
CDF8000	COILCRAFT	获取价格	Surface Mount, 10- and 8-Line Data Line EMI Filters
CDF8500	COILCRAFT	获取价格	Surface Mount, 10- and 8-Line Data Line EMI Filters
CDFCCA-25M000	VECTRON	获取价格	3.3, 5.0 volt CMOS Oscillator

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