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CDF7623-000 PDF预览

CDF7623-000

更新时间： 2024-09-27 03:05:11
品牌 Logo 应用领域
思佳讯 - SKYWORKS 肖特基二极管微波混频二极管
页数 文件大小 规格书
4页 107K
描述
Silicon Schottky Diode Chips

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中文翻译

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CDF7623-000 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active零件包装代码：DIE
包装说明：S-XUUC-N1针数：2
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8541.10.00.60风险等级：5.29
Is Samacsys：N其他特性：LOW NOISE
最小击穿电压：2 V配置：SINGLE
最大二极管电容：0.3 pF二极管元件材料：SILICON
二极管类型：MIXER DIODE最大正向电压 (VF)：0.3 V
频带：X BANDJESD-30 代码：S-XUUC-N1
湿度敏感等级：1元件数量：1
端子数量：2封装主体材料：UNSPECIFIED
封装形状：SQUARE封装形式：UNCASED CHIP
峰值回流温度（摄氏度）：260认证状态：Not Qualified
表面贴装：YES技术：SCHOTTKY
端子形式：NO LEAD端子位置：UPPER
处于峰值回流温度下的最长时间：40肖特基势垒类型：LOW BARRIER
Base Number Matches：1

CDF7623-000 数据手册

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DATA SHEET  
Silicon Schottky Diode Chips  
Features  
G
For detector and mixer applications  
G
Low capacitance for usage beyond 40 GHz  
G
ZBD and low-barrier designs  
G
P-type and N-type junctions  
G
Large bond pad chip design  
G
Available lead (Pb)-free, RoHS-compliant, and Green  
Description  
Skyworks silicon Schottky diode chips are intended for use  
as detector and mixer devices in hybrid integrated circuits at  
frequencies from below 100 MHz to higher than 40 GHz.  
Skyworks “Universal Chip” design features a 4-mil-diameter  
bond pad that is offset from the semiconductor junction  
preventing damage to the active junction as a result of  
wire bonding.  
P-type Schottky diodes generate lower 1/F noise and are  
preferred for Doppler mixers and biased detector applications.  
The bond pad for the P-type Schottky diode is the cathode.  
N-type Schottky diodes have lower parasitic resistance, R ,  
S
and will perform with lower conversion loss in mixer circuits.  
The bond pad for the N-type Schottky diode is the anode.  
Skyworks Green™ products are lead (Pb)-free, RoHS  
(Restriction of Hazardous Substances)-compliant,  
conform to the EIA/EICTA/JEITA Joint Industry Guide  
(JIG) Level A guidelines, and are free from antimony  
trioxide and brominated flame retardants.  
NEW  
As power-sensing detectors, these Schottky diode chips all have  
the same voltage sensitivity so long as the output video imped-  
ance is much higher than the video resistance of the diode.  
Figure 1 shows the expected detected voltage sensitivity as a  
function of RF source impedance in an untuned circuit. Note that  
sensitivity is substantially increased by transforming the source  
impedance from 50 Ω to higher values. Maximum sensitivity  
occurs when the source impedance equals the video resistance.  
In a detector circuit operating at zero bias, depending on the  
video load impedance, a ZBD device with R less than 10 kΩ  
V
may be more sensitive than a low-barrier diode with R greater  
V
than 100 kΩ. Applying forward bias reduces the diode video  
resistance as shown in Figure 2. Lower video resistance also  
increases the video bandwidth but does not increase voltage  
sensitivity, as shown in Figure 3. Biased Schottky diodes have  
better temperature stability and also may be used in temperature  
compensated detector circuits.  
Skyworks Solutions, Inc. • Phone [781] 376-3000 • Fax [781] 376-3100 • sales@skyworksinc.com • www.skyworksinc.com  
200139 Rev. E • Skyworks Proprietary Information • Products and Product Information are Subject to Change Without Notice. • September 5, 2007  
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