Datasheet > CDBD2020-G

CDBD2020-G

更新时间： 2024-11-25 07:19:59

品牌	Logo	应用领域
上华 - COMCHIP		/
页数	文件大小	规格书
4页	102K
描述
Chip Schottky Barrier Rectifier

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中文翻译

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数据手册

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CDBD2020-G 数据手册

Chip Schottky Barrier Rectifier

CDBD2020-G Thru. CDBD20200-G

Reverse Voltage: 20 to 200 Volts

Forward Current: 20.0 Amp

RoHS Device

D2PAK

Features

-Batch process design, excellent power dissipation offers

current and thermal resistance.

better reverse leakage

0.402(10.20)

0.386(9.80)

-Low profile surface mounted application in order to

optimize board space.

0.046(1.20)

0.032(0.80)

0.185(4.70)

0.169(4.30)

-Low power loss, high efficiency.

0.055(1.40)

0.047(1.20)

-High current capability, low forward voltage drop.

-High surge capability.

-Guardring for overvoltage protection.

-Ultra high-speed switching.

-Silicon epitaxial planar chip, metal silicon junction.

0.370(9.40)

0.354(9.00)

0.012(0.30)

0.004(0.10)

0.024(0.60)

0.016(0.40)

0.192(4.8)

0.176(4.4)

-Lead-free parts meet environmental standards of

0.063(1.60)

0.055(1.40)

MIL-STD-19500 /228

0.108(2.70)

0.205(5.20)

0.189(4.80)

0.092(2.30)

Mechanical data

-Case: TO-263/D2PAK, molded plastic.

-Terminals: solderable per MIL-STD-750,

Dimensions in inches and (millimeters)

method 2026.

-Polarity: Indicated by cathode band.

-Weunting Position: Any

-Weight:1.46 gram(approx.).

PIN 1

PIN 3

PIN 2

Maximum Ratings (At Ta=25°C, unless otherwise noted)

CDBD

20200-G

CDBD CDBD CDBD CDBD CDBD CDBD CDBD CDBD CDBD

Symbol

VRRM

Parameter

Unit

2020-G 2030-G 2040-G 2045-G 2050-G 2060-G 2080-G

20150-G

20100-G

Repetitive peak reverse voltage

200

140

100

150

Continuous reverse voltage

RMS voltage

100

150

105

VRMS

31.5

Maximum Forward rectified current

(See fig. 1)

20.0

0.75

Maximum forward voltage

IF=10.0A

0.55

0.85

1.00

Maxium Forward surge current, 8.3ms

singlehalf sine-wave superimposed on

rate load (JEDEC method)

IFSM

150

VR=VRRM TA=25°C

MaximumReverse

0.5

current

VR=VRRM TA=100°C

Typ.Thermal

Junction to Case

resistance

RθJc

2.0

°C/W

Operating temperature

Storage temperature

-55 to +125

-55 to +150

°C

-65 to +175

TSTG

REV:A

Page 1

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Comchip Technology CO., LTD.

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