Chip Schottky Barrier Rectifier
CDBD1020-HF Thru. CDBD10200-HF
Reverse Voltage: 20 to 200 Volts
Forward Current: 10.0 Amp
RoHS Device
Halogen Free
D2PAK
Features
0.402(10.20)
0.386( 9.80)
-Batch process design, excellent power dissipation offers
0.046(1.20)
0.032(0.80)
better reverse leakage current and thermal resistance.
0.185(4.70)
0.169(4.30)
-Low profile surface mounted application in order to
optimize board space.
0.055(1.40)
0.047(1.20)
-Low power loss, high efficiency.
2
-High current capability, low forward voltage drop.
-High surge capability.
0.370(9.40)
0.354(9.00)
0.012(0.30)
0.004(0.10)
-Guarding for overvoltage protection.
-Ultra high-speed switching.
1
3
0.024(0.60)
0.016(0.40)
0.192(4.8)
0.176(4.4)
0.063(1.60)
0.055(1.40)
-Silicon epitaxial planar chip, metal silicon junction.
-Lead-free part meets environmental standards of
0.108(2.70)
0.092(2.30)
0.205(5.20)
0.189(4.80)
MIL-STD-19500 /228
Mechanical data
-Case: TO-263/D2PAK, molded plastic.
Dimensions in inches and (millimeters)
-Terminals: solderable per MIL-STD-750,
method 2026.
-Polarity: Indicated by cathode band.
-Weunting Position: Any
-Weight:1.70 gram(approx.).
PIN 1
PIN 3
PIN 2
Maximum Ratings (At Ta=25°C, unless otherwise noted)
CDBD
CDBD
CDBD
CDBD
CDBD
CDBD
CDBD
CDBD
CDBD
Symbol
VRRM
VR
Unit
V
Parameter
1020-HF 1030-HF 1040-HF 1050-HF 1060-HF 1080-HF 10100-HF 10150-HF 10200-HF
Repetitive peak reverse voltage
200
200
140
20
20
14
30
30
21
50
50
35
60
60
80
80
56
100
100
70
150
150
105
40
40
28
Continuous reverse voltage
RMS voltage
V
VRMS
IO
V
42
Maximum Forward rectified current
(See fig. 1)
10.0
A
Maximum forward voltage
IF=10.0A
VF
V
A
0.55
0.75
0.85
1.00
Maxium Forward surge current, 8.3ms
singlehalf sine-wave superimposed on
rate load (JEDEC method)
IFSM
150
VR=VRRM TA=25°C
MaximumReverse
IR
IR
0.5
50
mA
mA
current
VR=VRRMTA=100°C
Typ.Thermal
Junction to Case
resistance
RθJc
3.0
°C/W
Operating temperature
Storage temperature
-55 to +125
-55 to +150
TJ
°C
°C
-65 to +175
TSTG
REV:A
Page 1
QW-JB013
Comchip Technology CO., LTD.