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CDBD1050-G PDF预览

CDBD1050-G

更新时间: 2024-11-25 07:19:59
品牌 Logo 应用领域
上华 - COMCHIP /
页数 文件大小 规格书
4页 102K
描述
Chip Schottky Barrier Rectifier

CDBD1050-G 数据手册

 浏览型号CDBD1050-G的Datasheet PDF文件第2页浏览型号CDBD1050-G的Datasheet PDF文件第3页浏览型号CDBD1050-G的Datasheet PDF文件第4页 
Chip Schottky Barrier Rectifier  
CDBD1020-G Thru. CDBD10200-G  
Reverse Voltage: 20 to 200 Volts  
Forward Current: 10.0 Amp  
RoHS Device  
D2PAK  
Features  
-Batch process design, excellent power dissipation offers  
better reverse leakage current and thermal resistance.  
0.402(10.20)  
0.386( 9.80)  
0.046(1.20)  
0.032(0.80)  
-Low profile surface mounted application in order to  
0.185(4.70)  
0.169(4.30)  
optimize board space.  
-Low power loss, high efficiency.  
0.055(1.40)  
0.047(1.20)  
-High current capability, low forward voltage drop.  
-High surge capability.  
2
0.370(9.40)  
0.354(9.00)  
-Guarding for overvoltage protection.  
-Ultra high-speed switching.  
0.012(0.30)  
0.004(0.10)  
1
3
0.024(0.60)  
0.016(0.40)  
-Silicon epitaxial planar chip, metal silicon junction.  
0.192(4.8)  
0.176(4.4)  
0.063(1.60)  
0.055(1.40)  
-Lead-free part meets environmental standards of  
MIL-STD-19500 /228  
0.108(2.70)  
0.205(5.20)  
0.189(4.80)  
0.092(2.30)  
Mechanical data  
-Case: TO-263/D2PAK, molded plastic.  
-Terminals: solderable per MIL-STD-750,  
Dimensions in inches and (millimeters)  
method 2026.  
-Polarity: Indicated by cathode band.  
-Weunting Position: Any  
-Weight:1.70 gram(approx.).  
PIN 1  
PIN 3  
PIN 2  
Maximum Ratings (At Ta=25°C, unless otherwise noted)  
CDBD  
CDBD  
CDBD  
CDBD  
CDBD  
CDBD  
CDBD  
CDBD  
CDBD  
Symbol  
VRRM  
VR  
Unit  
V
Parameter  
1020-G 1030-G 1040-G 1050-G 1060-G 1080-G 10100-G 10150-G 10200-G  
Repetitive peak reverse voltage  
200  
200  
140  
20  
20  
14  
30  
30  
21  
50  
50  
35  
60  
60  
80  
80  
56  
100  
100  
70  
150  
150  
105  
40  
40  
28  
Continuous reverse voltage  
RMS voltage  
V
VRMS  
IO  
V
42  
Maximum Forward rectified current  
(See fig. 1)  
10.0  
A
Maximum forward voltage  
IF=10.0A  
VF  
V
A
0.55  
0.75  
0.85  
1.00  
Maxium Forward surge current, 8.3ms  
singlehalf sine-wave superimposed on  
rate load (JEDEC method)  
IFSM  
150  
VR=VRRM TA=25°C  
MaximumReverse  
IR  
IR  
0.5  
50  
mA  
mA  
current  
VR=VRRMTA=100°C  
Typ.Thermal  
Junction to Case  
resistance  
RθJc  
3.0  
°C/W  
Operating temperature  
Storage temperature  
-55 to +125  
-55 to +150  
TJ  
°C  
°C  
-65 to +175  
TSTG  
REV:A  
Page 1  
QW-BB033  
Comchip Technology CO., LTD.  

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