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CDBA3200-HF PDF预览

CDBA3200-HF

更新时间: 2024-09-12 12:50:19
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SMD Schottky Barrier Rectifiers

CDBA3200-HF 数据手册

 浏览型号CDBA3200-HF的Datasheet PDF文件第2页浏览型号CDBA3200-HF的Datasheet PDF文件第3页浏览型号CDBA3200-HF的Datasheet PDF文件第4页 
SMD Schottky Barrier Rectifiers  
CDBA3150-HF Thru. CDBA3200-HF  
Reverse Voltage: 150 to 200 Volts  
Forward Current: 3.0 Amp  
RoHS Device  
Halogen Free  
DO-214AC (SMA)  
Features  
-Low Profile surface mount applications  
in order to optimize board space.  
0.067 (1.70)  
0.047 (1.20)  
0.114 (2.90)  
0.083 (2.10)  
-Low power loss, high efficiency.  
-Hight current capability, low forward voltage drop.  
-Hight surge capability.  
0.181 (4.60)  
0.157 (4.00)  
-Guardring for overvoltage protection.  
-Ultra high-speed switching.  
-Silicon epitaxial planar chip,metal silicon junction.  
0.012 (0.30)  
TYP.  
0.098 (2.50)  
0.067 (1.70)  
Mechanical data  
-Epoxy: UL94-V0 rate flame retardant.  
-Case: Molded plastic, DO-214AC / SMA  
0.008(0.20)  
0.061 (1.55)  
0.004(0.10)  
0.030 (0.75)  
0.209 (5.30)  
0.185 (4.70)  
-Terminals: solderable per MIL-STD-750,  
method 2026.  
Dimensions in inches and (millimeter)  
-Polarity: Indicated by cathode band.  
-weight: 0.055 grams  
Maximum Ratings and Electrical Characteristics  
Ratings at Ta=25°C unless otherwise noted.  
Single phase, half wave, 60Hz, resistive or inductive loaded.  
For capacitive load, derate current by 20% .  
CDBA  
CDBA  
Parameter  
Symbol  
Units  
3150-HF  
3200-HF  
Max. Repetitive peak reverse voltage  
Max. DC blocking voltage  
VRRM  
VDC  
VRMS  
VF  
150  
200  
200  
140  
0.90  
V
V
150  
105  
0.87  
Max. RMS voltage  
V
Max. Instantaneous forward voltage @ 3.0A, TA=25°C  
Operating Temperature  
V
TJ  
-50 to +175  
°C  
Symbol  
IO  
Parameter  
Conditions  
MIN.  
TYP.  
MAX.  
Units  
see Fig.1  
Forward rectified current  
Forward surge current  
3.0  
A
A
8.3ms single half sine-wave superimposed  
on rate load (JEDEC method)  
IFSM  
70  
VR =VRRM TA=25°C  
VR =VRRM TA=100°C  
IR  
IR  
0.5  
20  
mA  
mA  
Reverse Current  
Thermal Resistance  
Junction to ambient  
RθJA  
CJ  
55  
°C/W  
Diode Junction capacitance f=1MHZ and applied 4V DC reverse Voltage  
Storage temperature  
250  
pF  
°C  
TSTG  
-50  
+175  
REV:A  
Page 1  
QW-JB017  
Comchip Technology CO., LTD.  

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