SMD Schottky Barrier Rectifiers
CDBA3150-HF Thru. CDBA3200-HF
Reverse Voltage: 150 to 200 Volts
Forward Current: 3.0 Amp
RoHS Device
Halogen Free
DO-214AC (SMA)
Features
-Low Profile surface mount applications
in order to optimize board space.
0.067 (1.70)
0.047 (1.20)
0.114 (2.90)
0.083 (2.10)
-Low power loss, high efficiency.
-Hight current capability, low forward voltage drop.
-Hight surge capability.
0.181 (4.60)
0.157 (4.00)
-Guardring for overvoltage protection.
-Ultra high-speed switching.
-Silicon epitaxial planar chip,metal silicon junction.
0.012 (0.30)
TYP.
0.098 (2.50)
0.067 (1.70)
Mechanical data
-Epoxy: UL94-V0 rate flame retardant.
-Case: Molded plastic, DO-214AC / SMA
0.008(0.20)
0.061 (1.55)
0.004(0.10)
0.030 (0.75)
0.209 (5.30)
0.185 (4.70)
-Terminals: solderable per MIL-STD-750,
method 2026.
Dimensions in inches and (millimeter)
-Polarity: Indicated by cathode band.
-weight: 0.055 grams
Maximum Ratings and Electrical Characteristics
Ratings at Ta=25°C unless otherwise noted.
Single phase, half wave, 60Hz, resistive or inductive loaded.
For capacitive load, derate current by 20% .
CDBA
CDBA
Parameter
Symbol
Units
3150-HF
3200-HF
Max. Repetitive peak reverse voltage
Max. DC blocking voltage
VRRM
VDC
VRMS
VF
150
200
200
140
0.90
V
V
150
105
0.87
Max. RMS voltage
V
Max. Instantaneous forward voltage @ 3.0A, TA=25°C
Operating Temperature
V
TJ
-50 to +175
°C
Symbol
IO
Parameter
Conditions
MIN.
TYP.
MAX.
Units
see Fig.1
Forward rectified current
Forward surge current
3.0
A
A
8.3ms single half sine-wave superimposed
on rate load (JEDEC method)
IFSM
70
VR =VRRM TA=25°C
VR =VRRM TA=100°C
IR
IR
0.5
20
mA
mA
Reverse Current
Thermal Resistance
Junction to ambient
RθJA
CJ
55
°C/W
Diode Junction capacitance f=1MHZ and applied 4V DC reverse Voltage
Storage temperature
250
pF
°C
TSTG
-50
+175
REV:A
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QW-JB017
Comchip Technology CO., LTD.