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CD9015B PDF预览

CD9015B

更新时间: 2024-11-11 23:41:31
品牌 Logo 应用领域
其他 - ETC 晶体晶体管
页数 文件大小 规格书
3页 61K
描述
TRANSISTOR | BJT | PNP | 18V V(BR)CEO | TO-92

CD9015B 数据手册

 浏览型号CD9015B的Datasheet PDF文件第2页浏览型号CD9015B的Datasheet PDF文件第3页 
IS/ISO 9002  
Lic# QSC/L- 000019.2  
IS / IECQC 700000  
IS / IECQC 750100  
Continental Device India Limited  
An IS/ISO 9002 and IECQ Certified Manufacturer  
PNP SILICON PLANAR TRANSISTOR  
CD9015  
TO-92  
CBE  
ABSOLUTE MAXIMUM RATINGS  
DESCRIPTION  
SYMBOL  
VALUE  
UNIT  
V
V
Collector -Emitter Voltage  
Collector -Base Voltage  
Emitter Base Voltage  
Collector Current  
Collector Power Dissipation  
Operating And Storage Junction  
Temperature Range  
VCEO  
VCBO  
VEBO  
IC  
PC  
Tj, Tstg  
50  
50  
5.0  
100  
625  
V
mA  
mW  
deg C  
-55 to +150  
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)  
DESCRIPTION  
SYMBOL TEST CONDITION  
MIN  
50  
50  
5.0  
-
-
60  
-
TYP  
-
MAX  
-
-
-
50  
UNIT  
V
V
V
nA  
nA  
Collector -Emitter Voltage  
Collector -Base Voltage  
Emitter Base Voltage  
Collector Cut off Current  
Emitter Cut off Current  
DC Current Gain  
VCEO  
VCBO  
VEBO  
ICBO  
IEBO  
hFE  
IC=1mA, IB=0  
IC=100uA, IE=0  
IE=100uA, IC=0  
VCB=50V, IE=0  
VEB=5V, IC=0  
IC=1mA,VCE=5V  
-
-
-
-
-
-
-
50  
1000  
0.70  
1.0  
Collector Emitter Saturation Voltage VCE(Sat) IC=100mA,IB=5mA  
V
V
Emitter Base Saturation Voltage  
Dynamic Characteristics  
Output Capacitance  
VBE(Sat) IC=100mA,IB=5mA  
-
Cob  
ft  
VCB=10V,f=1MHz  
VCE=5V,IC=10mA,  
f=100MHz  
-
-
-
3.50  
-
pF  
MHz  
Transition Frequency  
125  
Noise Figure  
NF  
VCE=5V, IC=200uA  
f=1KHz  
-
-
4.0  
dB  
hFE CLASSIFICATION  
A : 60-150, B : 100-300, C : 200-600, D : 400-1000,  
D1 : 400-630, D2 : 570-840, D3 : 760-1000, E : >800  
Continental Device India Limited  
Page 1 of 3  
Data Sheet  

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