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CD9018F PDF预览

CD9018F

更新时间: 2024-11-11 22:28:27
品牌 Logo 应用领域
CDIL 晶体小信号双极晶体管射频小信号双极晶体管局域网
页数 文件大小 规格书
4页 157K
描述
NPN SILICON PLANAR EPITAXIAL TRANSISTOR

CD9018F 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
零件包装代码:TO-92包装说明:CYLINDRICAL, O-PBCY-T3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.67
Is Samacsys:N最大集电极电流 (IC):0.03 A
基于收集器的最大容量:1.7 pF配置:SINGLE
最小直流电流增益 (hFE):54最高频带:VERY HIGH FREQUENCY BAND
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL极性/信道类型:NPN
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:BOTTOM晶体管元件材料:SILICON
标称过渡频率 (fT):600 MHzBase Number Matches:1

CD9018F 数据手册

 浏览型号CD9018F的Datasheet PDF文件第2页浏览型号CD9018F的Datasheet PDF文件第3页浏览型号CD9018F的Datasheet PDF文件第4页 
Continental Device India Limited  
An ISO/TS16949 and ISO 9001 Certified Company  
NPN SILICON PLANAR EPITAXIAL TRANSISTOR  
CD9018  
TO-92  
Plastic Package  
C
B
E
AM/FM Amplifier, Local Oscillator of FM/VHF Tuner  
ABSOLUTE MAXIMUM RATINGS  
SYMBOL  
VALUE  
DESCRIPTION  
UNITS  
V
VCEO  
15  
Collector Emitter Voltage  
Collector Base Voltage  
Emitter Base Voltage  
Collector Current  
VCBO  
VEBO  
IC  
30  
V
5
30  
V
mA  
mW  
PD  
Power Dissipation @ Ta=25ºC  
400  
Tj  
125  
Junction Temperature  
ºC  
ºC  
Tstg  
- 55 to +125  
Storage Temperature Range  
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)  
DESCRIPTION  
SYMBOL  
TEST CONDITION  
MIN  
15  
30  
5
TYP  
MAX  
UNITS  
VCEO  
IC=3mA, IB=0  
Collector Emitter Voltage  
Collector Base Voltage  
Emitter Base Voltage  
Collector Cut Off Current  
Emitter Cut Off Current  
DC Current Gain  
V
VCBO  
VEBO  
ICBO  
IC=10mA, IE=0  
IE=10mA, IC=0  
V
V
VCB=15V, IE = 0  
VEB=3V, IC = 0  
VCE=5V, IC=1mA  
50  
100  
273  
0.5  
nA  
nA  
IEBO  
hFE  
29  
VCE (sat)  
IC=10mA, IB=1mA  
Collector Emitter Saturation Voltage  
V
DYNAMIC CHARACTERISTICS  
DESCRIPTION  
SYMBOL  
TEST CONDITION  
MIN  
TYP  
MAX  
UNITS  
Cob  
VCB=10V, IE=0,f=1MHz  
Output Capacitance  
pF  
1.7  
VCE=10V, IC=5mA,  
f=100MHz  
fT  
Transition Frequency  
Noise Figure  
600  
MHz  
dB  
VCE=10V, IC=1mA,  
f=60MHz  
NF  
5.0  
hFE Rank Classfication  
H
Rank  
hFE  
D
E
F
G
I
J
29 - 44  
97- 146  
40 - 59  
54 - 80  
72 - 108  
132 - 198 182 - 273  
CD9018Rev_3 170403E  
Data Sheet  
Page 1 of 4  
Continental Device India Limited  

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