Datasheet > CD9015E

CD9015E

更新时间： 2024-11-17 23:41:31

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
3页	61K
描述
TRANSISTOR \| BJT \| PNP \| 18V V(BR)CEO \| TO-92

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中文翻译

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数据手册

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CD9015E 数据手册

IS/ISO 9002

Lic# QSC/L- 000019.2

IS / IECQC 700000

IS / IECQC 750100

Continental Device India Limited

An IS/ISO 9002 and IECQ Certified Manufacturer

PNP SILICON PLANAR TRANSISTOR

CD9015

TO-92

CBE

ABSOLUTE MAXIMUM RATINGS

DESCRIPTION

SYMBOL

VALUE

UNIT

Collector -Emitter Voltage

Collector -Base Voltage

Emitter Base Voltage

Collector Current

Collector Power Dissipation

Operating And Storage Junction

Temperature Range

VCEO

VCBO

VEBO

Tj, Tstg

5.0

100

625

deg C

-55 to +150

ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)

DESCRIPTION

SYMBOL TEST CONDITION

MIN

5.0

TYP

MAX

UNIT

Collector -Emitter Voltage

Collector -Base Voltage

Emitter Base Voltage

Collector Cut off Current

Emitter Cut off Current

DC Current Gain

VCEO

VCBO

VEBO

ICBO

IEBO

hFE

IC=1mA, IB=0

IC=100uA, IE=0

IE=100uA, IC=0

VCB=50V, IE=0

VEB=5V, IC=0

IC=1mA,VCE=5V

1000

0.70

1.0

Collector Emitter Saturation Voltage VCE(Sat) IC=100mA,IB=5mA

Emitter Base Saturation Voltage

Dynamic Characteristics

Output Capacitance

VBE(Sat) IC=100mA,IB=5mA

Cob

VCB=10V,f=1MHz

VCE=5V,IC=10mA,

f=100MHz

3.50

MHz

Transition Frequency

125

Noise Figure

VCE=5V, IC=200uA

f=1KHz

4.0

hFE CLASSIFICATION

A : 60-150, B : 100-300, C : 200-600, D : 400-1000,

D1 : 400-630, D2 : 570-840, D3 : 760-1000, E : >800

Continental Device India Limited

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Data Sheet

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中文翻译

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