Datasheet > CD8050C

CD8050C

更新时间： 2024-09-13 23:41:31

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
3页	61K
描述
TRANSISTOR \| BJT \| NPN \| 25V V(BR)CEO \| TO-92

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中文翻译

获取价格

数据手册

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CD8050C 数据手册

IS/ISO 9002

Lic# QSC/L- 000019.2

IS / IECQC 700000

IS / IECQC 750100

Continental Device India Limited

An IS/ISO 9002 and IECQ Certified Manufacturer

NPN SILICON PLANAR TRANSISTOR

CD8050

TO-92

CBE

ABSOLUTE MAXIMUM RATINGS

DESCRIPTION

SYMBOL

VALUE

UNIT

Collector -Base Voltage

Collector -Emitter Voltage

Emitter Base Voltage

Collector Current

VCBO

VCEO

VEBO

6.0

2.0

Collector Power Dissipation

Operating And Storage Junction

Temperature Range

Tj, Tstg

1.0

-55 to +125

deg C

ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)

DESCRIPTION

SYMBOL TEST CONDITION

MIN

6.0

TYP

MAX

500

100

300

UNIT

Collector -Base Voltage

Collector -Emitter Voltage

Emitter Base Voltage

Collector Cut off Current

Emitter Cut off Current

DC Current Gain

VCBO

VCEO

VEBO

ICBO

IEBO

hFE

IC=100uA, IE=0

IC=10mA, IB=0

IE=10uA, IC=0

VCB=20V, IE=0

VEB=4V, IC=0

IC=5mA,VCE=1V

IC=100mA,VCE=1V*

IC=800mA,VCE=1V

Collector Emitter Saturation Voltage VCE(Sat) IC=800mA,IB=80mA

Base Emitter Saturation Voltage

0.50

1.2

VBE(Sat) IC=800mA,IB=80mA

Dynamic Characteristics

Transition Frequency

Output Capacitance

Cob

VCE=10V,IC=100mA,

VCB=10V,f=1MHz

150

MHz

CLASSIFICATION

hFE*

85-160

120-200

160-300

Continental Device India Limited

Page 1 of 3

Data Sheet

12 3

中文翻译

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