CD54HC73, CD74HC73, CD74HCT73
DC Electrical Specifications (Continued)
TEST
CONDITIONS
o
o
o
o
o
25 C
-40 C TO 85 C
-55 C TO 125 C
PARAMETER
SYMBOL V (V)
I
(mA)
V
(V) MIN TYP MAX
MIN
MAX
MIN
MAX
UNITS
I
O
CC
Quiescent Device
Current
I
V
GND
or
0
6
-
-
4
-
40
-
80
µA
CC
CC
HCT TYPES
High Level Input
Voltage
V
-
-
-
-
4.5 to
5.5
2
-
-
-
-
-
0.8
-
2
-
-
0.8
-
2
-
-
0.8
-
V
V
V
IH
Low Level Input
Voltage
V
4.5 to
5.5
IL
High Level Output
Voltage
V
V
or
IH
-0.02
4.5
4.4
4.4
4.4
OH
V
IL
CMOS Loads
High Level Output
Voltage
-4
4.5
3.98
-
-
3.84
-
3.7
-
V
TTL Loads
Low Level Output
Voltage CMOS Loads
V
V
V
or
IH
0.02
4
4.5
4.5
-
-
-
-
0.1
-
-
0.1
-
-
0.1
0.4
V
V
OL
IL
Low Level Output
Voltage
0.26
0.33
TTL Loads
Input Leakage
Current
I
V
and
GND
-
5.5
5.5
-
±0.1
-
±1
-
±1
µA
I
CC
Quiescent Device
Current
I
V
or
0
-
-
-
-
4
-
-
40
-
-
80
µA
µA
CC
CC
GND
Additional Quiescent
Device Current Per
Input Pin: 1 Unit Load
∆I
CC
(Note 2)
V
4.5 to
5.5
100
360
450
490
CC
- 2.1
NOTE:
2. For dual-supply systems theoretical worst case (V = 2.4V, V
I
= 5.5V) specification is 1.8mA.
CC
HCT Input Loading Table
HC TYPES
HCT TYPES
3V
INPUT
All
UNIT LOADS
Input Level
V
0.3
CC
V
S
50% V
CC
1.3V
NOTE: Unit Load is ∆I
tions table, e.g., 360µA max at 25 C.
limit specified in DC Electrical Specifica-
CC
o
NOTE: Transition times and propagation delay times
Prerequisite For Switching Specifications
o
o
o
o
o
25 C
-40 C TO 85 C -55 C TO 125 C
TEST
V
CC
PARAMETER
HC TYPES
SYMBOL CONDITIONS (V)
MIN TYP MAX
MIN
MAX
MIN
MAX
UNITS
CP Pulse Width
t
t
-C = 50pF
2
80
16
14
80
16
14
-
-
-
-
-
-
-
-
-
-
-
-
100
20
-
-
-
-
-
-
120
24
-
-
-
-
-
-
ns
ns
ns
ns
ns
ns
w
L
4.5
6
17
20
R Pulse Width
-C = 50pF
2
100
20
120
24
w
L
4.5
6
17
20
4