Datasheet > CD5196

CD5196

更新时间： 2024-09-15 22:28:27

品牌	Logo	应用领域
CDI-DIODE		二极管
页数	文件大小	规格书
2页	74K
描述
GENERAL PURPOSE SILICON DIODES

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数据手册

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CD5196 数据手册

• GENERAL PURPOSE SILICON DIODES

CD483B

CD485B

CD486B

CD645

AND

• ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE

• COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES

EXCEPT SOLDER REFLOW

CD5194 thru CD5196

24 MILS

12 MILS

MAXIMUM RATINGS

Operating Temperature: -65°C to +175°C

Storage Temperature: -65°C to +175°C

ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified

FSM

RWM

TYPE

=+150°C

= 1/120 S

=25°C

(pk)

CD483B

CD485B

CD486B

CD645

200

400

200

180

250

270

180

225

150

CD5194

CD5195

CD5196

180

250

180

225

(1)

at V

+25°C

at V

CAP

RWM

+25°C

RWM

TYPE

+150°C

=4V

DESIGN DATA

V dc

nA dc

µA

µA dc

CD483B

CD485B

CD486B

CD645

0.8 - 1.0

100

–

METALLIZATION:

–

Top: (Anode) ....................Al

Back: (Cathode)..............Au

2.0

–

CD5194

CD5195

CD5196

100

–

AL THICKNESS ............25,000 Å Min

GOLD THICKNESS ........4,000 Å Min

CHIP THICKNESS ..................10 Mils

NOTE 1

AT 100mA (pulsed) except for CD645

which is at 400mA (pulsed)

TOLERANCES: ALL

Dimensions ± 2 mils

22 COREY STREET, MELROSE, MASSACHUSETTS 02176

PHONE (781) 665-1071

WEBSITE: http://www.cdi-diodes.com

FAX (781) 665-7379

E-mail: mail@cdi-diodes.com

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