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CD4001BMJ-MIL PDF预览

CD4001BMJ-MIL

更新时间: 2024-11-04 13:06:43
品牌 Logo 应用领域
美国国家半导体 - NSC
页数 文件大小 规格书
6页 165K
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CD4001BMJ-MIL 数据手册

 浏览型号CD4001BMJ-MIL的Datasheet PDF文件第2页浏览型号CD4001BMJ-MIL的Datasheet PDF文件第3页浏览型号CD4001BMJ-MIL的Datasheet PDF文件第4页浏览型号CD4001BMJ-MIL的Datasheet PDF文件第5页浏览型号CD4001BMJ-MIL的Datasheet PDF文件第6页 
March 1988  
CD4001BM/CD4001BC Quad 2-Input  
NOR Buffered B Series Gate  
CD4011BM/CD4011BC Quad 2-Input  
NAND Buffered B Series Gate  
General Description  
Features  
Y
Low power TTL  
compatibility  
Fan out of 2 driving 74L  
or 1 driving 74LS  
These quad gates are monolithic complementary MOS  
(CMOS) integrated circuits constructed with N- and P-chan-  
nel enhancement mode transistors. They have equal source  
and sink current capabilities and conform to standard B se-  
ries output drive. The devices also have buffered outputs  
which improve transfer characteristics by providing very  
high gain.  
Y
5V10V15V parametric ratings  
Y
Symmetrical output characteristics  
Maximum input leakage 1 mA at 15V over full tempera-  
ture range  
Y
All inputs are protected against static discharge with diodes  
.
SS  
to V  
and V  
DD  
Schematic Diagrams  
CD4001BC/BM  
(/4 of device shown  
e
a
B
J
A
e
e
Logical ‘‘1’’  
Logical ‘‘0’’  
High  
Low  
TL/F/5939–2  
*All inputs protected by standard  
CMOS protection circuit.  
TL/F/5939–1  
CD4011BC/BM  
(/4 of device shown  
e
J
A
B
#
e
e
Logical ‘‘1’’  
Logical ‘‘0’’  
High  
Low  
TL/F/5939–6  
*All inputs protected by standard  
CMOS protection circuit.  
TL/F/5939–5  
C
1995 National Semiconductor Corporation  
TL/F/5939  
RRD-B30M105/Printed in U. S. A.  

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