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CD214C-R350 PDF预览

CD214C-R350

更新时间： 2024-11-04 04:52:15
品牌 Logo 应用领域
伯恩斯 - BOURNS /
页数 文件大小 规格书
4页 303K
描述
CD214C-R350~R31000 Glass Passivated Rectifiers

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中文翻译

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CD214C-R350 数据手册

 浏览型号CD214C-R350的Datasheet PDF文件第2页浏览型号CD214C-R350的Datasheet PDF文件第3页浏览型号CD214C-R350的Datasheet PDF文件第4页 
Features  
■ Lead free device (RoHS compliant*)  
■ Glass passivated chip  
■ Low reverse leakage current  
■ Low forward voltage drop  
■ High current capability  
CD214C-R350~R31000 Glass Passivated Rectifiers  
General Information  
The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop  
increasingly smaller electronic components. Bourns offers Glass Passivated Rectifiers for rectification applications, in compact chip  
DO-214AB (SMC) size format, which offer PCB real estate savings and are considerably smaller than competitive parts. The Glass Passivated  
Rectifier Diodes offer a forward current of 3.0 A with a choice of repetitive peak reverse voltage of 50 V up to 1000 V.  
Bourns Chip Diodes conform to JEDEC standards, are easy to handle on standard pick and place equipment and their flat configuration  
minimizes roll away.  
Electrical Characteristics (@ T = 25 °C Unless Otherwise Noted)  
A
CD214C-  
R3400  
Parameter  
Symbol  
Unit  
R350  
R3100  
R3200  
R3600  
R3800  
R31000  
Maximum Repetitive  
Peak Reverse Voltage  
V
V
50  
100  
200  
400  
600  
800  
1000  
V
RRM  
Maximum RMS Voltage  
35  
50  
70  
140  
200  
280  
400  
420  
600  
560  
800  
700  
V
V
RMS  
Maximum DC Blocking Voltage  
Maximum Average Forward  
V
100  
1000  
DC  
I
3.0  
A
Rectified Current (@ T = 100 °C)1  
L
(AV)  
DC Reverse Current @ Rated DC  
I
10.0  
µA  
R
R
Blocking Voltage (@T = 25 °C)  
J
DC Reverse Current @ Rated DC  
I
250.0  
40  
µA  
pF  
Blocking Voltage (@T = 125 °C)  
J
Typical Junction Capacitance2  
C
J
Maximum Instantaneous  
Forward Voltage @ 3 A  
Typical Thermal Resistance3  
V
1.15  
10  
V
F
R
θJA  
°C/W  
Peak forward surge current 8.3 ms  
single half sine-wave superimposed  
on rated load (JEDEC Method)  
I
100  
A
FSM  
Notes:  
1 See Forward Derating Curve.  
2 Measured at 1 MHz and an applied reverse voltage of 4.0 V.  
3 Thermal resistance from junction to lead.  
Thermal Characteristics (@ T = 25 °C Unless Otherwise Noted)  
A
Parameter  
Symbol  
CD214C-R350~R31000  
Unit  
Operating Temperature Range  
Storage Temperature Range  
TJ  
-65 to +175  
-65 to +175  
°C  
°C  
TSTG  
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex.  
Specifications are subject to change without notice.  
Customers should verify actual device performance in their specific applications.  
1234

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