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CD214C-T100CLF PDF预览

CD214C-T100CLF

更新时间： 2024-11-04 20:59:23
品牌 Logo 应用领域
伯恩斯 - BOURNS 局域网光电二极管
页数 文件大小 规格书
4页 298K
描述
Trans Voltage Suppressor Diode, 400W, 100V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AB, ROHS COMPLIANT, PLASTIC, SMC, 2 PIN

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CD214C-T100CLF 技术参数

是否Rohs认证： 符合生命周期：Obsolete
零件包装代码：DO-214AB包装说明：R-PDSO-C2
针数：2Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.10.00.50
风险等级：5.84最大击穿电压：141 V
最小击穿电压：111 V配置：SINGLE
二极管元件材料：SILICON二极管类型：TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码：DO-214ABJESD-30 代码：R-PDSO-C2
JESD-609代码：e3最大非重复峰值反向功率耗散：400 W
元件数量：1端子数量：2
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性：BIDIRECTIONAL最大功率耗散：1 W
认证状态：Not Qualified最大重复峰值反向电压：100 V
表面贴装：YES技术：AVALANCHE
端子面层：TIN端子形式：C BEND
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

CD214C-T100CLF 数据手册

 浏览型号CD214C-T100CLF的Datasheet PDF文件第2页浏览型号CD214C-T100CLF的Datasheet PDF文件第3页浏览型号CD214C-T100CLF的Datasheet PDF文件第4页 
Features  
■ Lead free device (RoHS compliant*)  
■ Glass passivated chip  
■ Low reverse leakage current  
■ Low forward voltage drop  
■ High current capability  
CD214C-R350~R31000 Glass Passivated Rectifiers  
General Information  
The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop  
increasingly smaller electronic components. Bourns offers Glass Passivated Rectifiers for rectification applications, in compact chip  
DO-214AB (SMC) size format, which offer PCB real estate savings and are considerably smaller than competitive parts. The Glass Passivated  
Rectifier Diodes offer a forward current of 3.0 A with a choice of repetitive peak reverse voltage of 50 V up to 1000 V.  
Bourns Chip Diodes conform to JEDEC standards, are easy to handle on standard pick and place equipment and their flat configuration  
minimizes roll away.  
Electrical Characteristics (@ T = 25 °C Unless Otherwise Noted)  
A
CD214C-  
R3400  
Parameter  
Symbol  
Unit  
R350  
R3100  
R3200  
R3600  
R3800  
R31000  
Maximum Repetitive  
Peak Reverse Voltage  
V
V
50  
100  
200  
400  
600  
800  
1000  
V
RRM  
Maximum RMS Voltage  
35  
50  
70  
140  
200  
280  
400  
420  
600  
560  
800  
700  
V
V
RMS  
Maximum DC Blocking Voltage  
Maximum Average Forward  
V
100  
1000  
DC  
I
3.0  
A
Rectified Current (@ T = 100 °C)1  
L
(AV)  
DC Reverse Current @ Rated DC  
I
10.0  
µA  
R
R
Blocking Voltage (@T = 25 °C)  
J
DC Reverse Current @ Rated DC  
I
250.0  
40  
µA  
pF  
Blocking Voltage (@T = 125 °C)  
J
Typical Junction Capacitance2  
C
J
Maximum Instantaneous  
Forward Voltage @ 3 A  
Typical Thermal Resistance3  
V
1.15  
10  
V
F
R
θJA  
°C/W  
Peak forward surge current 8.3 ms  
single half sine-wave superimposed  
on rated load (JEDEC Method)  
I
100  
A
FSM  
Notes:  
1 See Forward Derating Curve.  
2 Measured at 1 MHz and an applied reverse voltage of 4.0 V.  
3 Thermal resistance from junction to lead.  
Thermal Characteristics (@ T = 25 °C Unless Otherwise Noted)  
A
Parameter  
Symbol  
CD214C-R350~R31000  
Unit  
Operating Temperature Range  
Storage Temperature Range  
TJ  
-65 to +175  
-65 to +175  
°C  
°C  
TSTG  
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex.  
Specifications are subject to change without notice.  
Customers should verify actual device performance in their specific applications.  
1234

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