Datasheet > CD13003A

CD13003A

更新时间： 2024-11-28 23:40:19

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
4页	41K
描述
BJT

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数据手册

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CD13003A 数据手册

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Continental Device India Limited

An IS/ISO 9002 and IECQ Certified Manufacturer

CD13003

NPN SILICON POWER TRANSISTOR

TO126

Plastic Package

Applications

Suitable for Lighting, Switching Regulator and Motor Control

ABSOLUTE MAXIMUM RATINGS(Ta=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL

VALUE

600

400

9.0

1.5

3.0

0.75

1.5

2.25

4.5

UNIT

V_CBO

Collector -Base Voltage

Collector -Emitter ( sus) Voltage

Emitter -Base Voltage

Collector Current Continuous

Peak (1)

Base Current Continuous

Peak (1)

Emitter Current Continuous

Peak (1)

Power Dissipation @ Ta=25^oC

V_CEO

V_EBO

I_C

I_CM

I_B

I_BM

I_E

I_EM

P_D

1.4

11.2

mW/ºC

Derate Above 25ºC

P_D

Power Dissipation @ Tc=25ºC

mW/ºC

ºC

Derate Above 25ºC

Operating And Storage Junction

320

-65 to +150

T_j, T_stg

Temperature Range

THERMAL RESISTANCE

Junction to Case

Rth _(j-c)

Rth _(j-a)

3.12

ºC/W

ºC

Junction to Ambient

Maximum Lead Temperature for Soldering

Purposes: 1/8" from Case for 5 Seconds.

275

(1) Pulse Test: Pulse Width= 5ms Duty Cycle =10%

ELECTRICAL CHARACTERISTICS (Ta=25ºC Unless Otherwise Specified)

DESCRIPTION

SYMBOLTEST CONDITION

MIN TYP MAX

UNIT

V_CBOI_C=1mA, I_E=0

Collector -Base Voltage

Collector -Emitter ( sus) Voltage

Collector-Cuttoff Current

600

400

V_CEO(sus)* I_C=10mA, I_B=0

I_CBOV_CB=600V, I_E=0

1.0

VCB=600V, IE=0,TC=100ºC

I_EBOV_EB=9V, I_C=0

5.0

1.0

Emitter-Cuttoff Current

Continental Device India Limited

Data Sheet

Page 1 of 4

12 3 4

中文翻译

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