CD13005

更新时间： 2024-11-28 21:53:35

品牌	Logo	应用领域
CDIL		晶体晶体管局域网
页数	文件大小	规格书
4页	158K
描述
NPN SILICON POWER TRANSISTOR

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中文翻译

获取价格

数据手册

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CD13005 数据手册

Continental Device India Limited

An ISO/TS16949 and ISO 9001 Certified Company

NPN SILICON POWER TRANSISTOR

CD13005

TO-220

Plastic Package

Applications

Suitable for Lighting, Switching Regulator and Motor Control

ABSOLUTE MAXIMUM RATINGS

VALUE

600

UNIT

DESCRIPTION

SYMBOL

V_CBO

Collector Base Voltage

Collector Emitter (sus) Voltage

Emitter Base Voltage

V_CEO

V_EBO

I_C

400

9.0

2.0

Collector Current Continuous

I_CM

I_B

I_BM

I_E

4.0

0.75

1.5

Peak (1)

Base Current Continuous

Peak (1)

2.25

4.5

Emitter Current Continuous

I_EM

P_D

Peak (1)

Power Dissipation @ T_a=25 ºC

Derate Above 25ºC

1.4

11.2

mW/ ºC

Power Dissipation @ T_c=25 ºC

P_D

480

mW/ ºC

Derate Above 25ºC

Operating And Storage Junction

Temperature Range

T_j,T_stg

- 65 to+150

ºC

THERMAL RESISTANCE

R_{th (j-c)}

R_{th (j-a)}

2.08

ºC/W

Junction to Case

Junction to Ambient

Maximum Lead Temperature for Soldering

Purpose: 1/8" from Case for 5 Seconds

T_L

275

ºC

(1) Pulse Test: Pulse Width=5ms, Duty Cycle=10%

ELECTRICAL CHARACTERISTICS (T_a=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL

TEST CONDITION

MIN TYP MAX

UNIT

V_CBO

I_C=1mA, I_E=0

I_C=10mA, I_B=0

Collector Base Voltage

Collector Emitter (sus) Voltage

Collector Cut Off Current

600

400

*V_CEO(sus)

I_CBO

V_CB=600V_,I_E=0

V_CB=600V_,I_E=0, T_c=100ºC

V_EB=9V, I_C=0

1.0

5.0

1.0

I_EBO

Emitter Cut Off Current

*Pulse Test:- PW=300ms, Duty Cycle=2%

CD13005Rev_3 260404E

Data Sheet

Page 1 of 4

Continental Device India Limited

12 3 4

中文翻译

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