CD13003DTUBE

更新时间： 2024-11-29 13:00:19

品牌	Logo	应用领域
CDIL		晶体晶体管
页数	文件大小	规格书
3页	79K
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数据手册

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CD13003DTUBE 数据手册

IS/ISO 9002

IS / IECQC 700000

Lic# QSC/L- 000019.2 IS / IECQC 750100

Continental Device India Limited

An IS/ISO 9002 and IECQ Certified Manufacturer

NPN SILICON POWER TRANSISTOR

CD13003

TO-126

MARKING: CD

13003

Applications.

Suitable for Lighting, Switching Regulator and Motor Control.

ABSOLUTE MAXIMUM RATINGS

DESCRIPTION

SYMBOL

VCBO

VCEO

VEBO

VALUE

UNIT

Collector -Base Voltage

Collector -Emitter ( sus) Voltage

Emitter -Base Voltage

Collector Current Continuous

Peak (1)

600

400

9.0

1.5

3.0

ICM

Base Current Continuous

Peak (1)

IBM

0.75

1.5

Emitter Current Continuous

Peak (1)

IEM

2.25

4.5

1.4

11.2

320

Power Dissipation @ Ta=25 deg C

Derate Above 25 deg C

Power Dissipation @ Tc=25 deg C

Derate Above 25 deg C

Operating And Storage Junction

Temperature Range

mW /deg C

deg C

Tj, Tstg

-65 to +150

THERMAL RESISTANCE

Junction to Case

Junction to Ambient

Rth (j-c)

Rth (j-a)

3.12

deg C/W

Maximum Lead Temperature for

Soldering Purposes: 1/8" from Case

for 5 Seconds.

275

deg C

(1) Pulse Test: Pulse Width= 5ms Duty Cycle =10%

ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)

DESCRIPTION

SYMBOL TEST CONDITION

VCBO IC=1mA, IE=0

VCEO(sus)* IC=10mA, IB=0

MIN TYP MAX

UNIT

Collector -Base Voltage

Collector -Emitter ( sus) Voltage

Collector-Cuttoff Current

600

400

ICBO

VCB=600V, IE=0

1.0

5.0

1.0

VCB=600V, IE=0,TC=100 deg C

VEB=9V, IC=0

IC=0.5A,VCE=5V

Emitter-Cuttoff Current

DC Current Gain

IEBO

hFE*

8.0

5.0

IC=2A,VCE=5V

Continental Device India Limited

Page 1 of 3

Data Sheet

12 3

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