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CBRHD-06 PDF预览

CBRHD-06

更新时间: 2024-02-25 21:11:20
品牌 Logo 应用领域
CENTRAL 整流二极管桥式整流二极管光电二极管
页数 文件大小 规格书
2页 147K
描述
HIGH DENSITY SURFACE MOUNT  AMP DUAL IN LINE BRIDGE RECTIFIER

CBRHD-06 技术参数

是否Rohs认证: 不符合生命周期:Active
包装说明:DIP-4Reach Compliance Code:not_compliant
风险等级:5.83其他特性:HIGH RELIABILITY
最小击穿电压:600 V配置:BRIDGE, 4 ELEMENTS
二极管元件材料:SILICON二极管类型:BRIDGE RECTIFIER DIODE
JESD-30 代码:R-PDSO-G4JESD-609代码:e0
最大非重复峰值正向电流:30 A元件数量:4
相数:1端子数量:4
最高工作温度:150 °C最低工作温度:-65 °C
最大输出电流:0.5 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED最大重复峰值反向电压:600 V
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

CBRHD-06 数据手册

 浏览型号CBRHD-06的Datasheet PDF文件第2页 
TM  
CBRHD SERIES  
Central  
Semiconductor Corp.  
HIGH DENSITY SURFACE MOUNT  
½ AMP DUAL IN LINE  
FEATURES:  
BRIDGE RECTIFIER  
Truly efficient use of board space, requires  
only 42mm² of board space vs. 120mm² of board  
space for industry standard 1.0 Amp surface  
mount bridge rectifier.  
TM  
HD  
BRIDGE  
50% higher density (amps/mm²) than the industry  
standard 1.0 Amp surface mount bridge rectifier.  
HDDIP CASE  
Glass passivated chips for high reliability.  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CBRHD series types are silicon full wave bridge rectifiers mounted  
in a durable epoxy surface mount molded case, utilizing glass passivated chips.  
MAXIMUM RATINGS: (T =25°C unless otherwise noted)  
A
CBRHD CBRHD CBRHD CBRHD  
SYMBOL  
-02  
200  
200  
140  
-04  
400  
400  
280  
-06  
600  
600  
420  
-10* UNITS  
Peak Repetitive Reverse Voltage  
DC Blocking Voltage  
V
1000  
1000  
700  
V
V
V
A
A
A
RRM  
V
R
RMS Reverse Voltage  
V
R(RMS)  
Average Forward Current (T =40°C)(1) I  
0.5  
0.8  
30  
A
O
Average Forward Current (T =40°C)(2) I  
A
O
Peak Forward Surge Current  
Operating and Storage  
Junction Temperature  
I
FSM  
T ,T  
J stg  
-65 to +150  
°C  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNITS  
V
F
I =400mA (Per Diode)  
F
1.0  
5.0  
V
mA  
mA  
pF  
I
V =Rated V  
R
R
R
RRM  
I
V =Rated V  
, T =125°C  
500  
R
RRM  
A
C
V =4.0V, f=1.0MHz  
20  
J
R
(1) Mounted on a Glass-Epoxy P.C.B.  
(2) Mounted on a Ceramic P.C.B.  
*Available on special order, please consult factory.  
104  

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