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C-IXFD20N60 PDF预览

C-IXFD20N60

更新时间: 2024-11-15 21:00:19
品牌 Logo 应用领域
IXYS 晶体管
页数 文件大小 规格书
1页 128K
描述
Power Field-Effect Transistor, 600V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

C-IXFD20N60 技术参数

生命周期:Obsolete包装说明:UNCASED CHIP, R-XUUC-N2
Reach Compliance Code:unknown风险等级:5.84
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:600 V
最大漏源导通电阻:0.35 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-XUUC-N2元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:UNCASED CHIP极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:YES
端子形式:NO LEAD端子位置:UPPER
晶体管元件材料:SILICONBase Number Matches:1

C-IXFD20N60 数据手册

  

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