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| 型号 | 品牌 | 获取价格 | 描述 | 数据表 |
| C-IXFD6N100 | IXYS |
获取价格 |
Power Field-Effect Transistor, 1000V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Sem |
|
| C-IXFD6N90 | IXYS |
获取价格 |
Power Field-Effect Transistor, 900V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Se |
|
| C-IXFD75N10 | IXYS |
获取价格 |
Power Field-Effect Transistor, 100V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide S |
|
| C-IXFD76N07-12 | IXYS |
获取价格 |
Power Field-Effect Transistor, 70V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide S |
|
| C-IXFD8N80 | IXYS |
获取价格 |
Power Field-Effect Transistor, 800V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Se |
|
| C-IXFD90N20Q | IXYS |
获取价格 |
Power Field-Effect Transistor, 200V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide |
|
| C-IXGD10N100 | IXYS |
获取价格 |
Insulated Gate Bipolar Transistor, 1000V V(BR)CES, N-Channel |
|
| C-IXGD10N100A | IXYS |
获取价格 |
Insulated Gate Bipolar Transistor, 1000V V(BR)CES, N-Channel |
|
| C-IXGD10N60 | IXYS |
获取价格 |
Insulated Gate Bipolar Transistor, 600V V(BR)CES, N-Channel |
|
| C-IXGD10N60A | IXYS |
获取价格 |
Insulated Gate Bipolar Transistor, 600V V(BR)CES, N-Channel |
|
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