Datasheet > BZX84C3V6W

BZX84C3V6W

更新时间： 2024-09-16 12:33:31

品牌	Logo	应用领域
TYSEMI		二极管测试
页数	文件大小	规格书
2页	117K
描述
Planar Die Construction, 200mW Power Dissipation

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BZX84C3V6W 数据手册

Product specification

BZX84C3V6W

Features

Planar Die Construction

200mW Power Dissipation

Ultra-Small Surface Mount Package

Absolute Maximum Ratings Ta = 25

Parameter

Forward Voltage @ IF = 10mA

Symbol

Rating

0.9

Unit

Power Dissipation

200

K/W

Thermal Resistance, Junction to Ambient Air

Operating and Storage Temperature Range

625

Tj, TSTG

-65 to +150

Electrical Characteristics @ TA = 25 C unless otherwise specified

Maximum

Temperature

Coefficient of

Zener Voltage

@ I^ZT= 5mA

(mV/ C)

Zener Voltage

Range *1

Maximum Zener Impedance*2

Reverse Current

Type

Number

V^Z@ I^ZT

I^ZT

Z^ZT@ I^ZTZ^ZK@ I^ZK

I^ZK

I^R

@V^R

Nom (V) Min (V)

3.6 3.4

Max (V)

3.8

Min

-3.5

Max

BZX84C3V6W

600

*1. Short duration test pulse used to minimize self-heating effect.

*2. f = 1KHz.

Marking

KRF

http://www.twtysemi.com

1 of 2

sales@twtysemi.com

4008-318-123

中文翻译

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