Datasheet > BZX55C11

BZX55C11

更新时间： 2024-09-20 09:05:31

品牌	Logo	应用领域
强茂 - PANJIT		二极管测试
页数	文件大小	规格书
3页	76K
描述
AXIAL LEAD ZENER DIODES

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中文翻译

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数据手册

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BZX55C11 数据手册

BZX55C2V4~BZX55C100

AXIAL LEAD ZENER DIODES

POWER

500 mWatts

VOLTAGE

2.4 to 100 Volts

FEATURES

• Planar Die construction

• 500mW Power Dissipation

• Ideally Suited for Automated Assembly Processes

• In compliance with EU RoHS 2002/95/EC directives

MECHANICALDATA

• Case: Molded glass DO-35

• Terminals: Solderable per MIL-STD-750, Method 2026

• Polarity: See Diagram Below

• Approx. Weight: 0.13 grams

• Mounting Position: Any

• Ordering information: Suffix :” -35” to order DO-35 Package

• Packing information

- 2K per Bulk box

T/R - 10K per 13" plastic Reel

T/B - 5K per horiz. tape & Ammo box

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TJ =25°C unless otherwise noted)

Parameter

Power Dissipation at Tamb = 25 ^OC

Symbol

Value

500

Units

P_TOT

Junction Temperature

175

^OC

T_J

T_s

Storage Temperature Range

-65 to +175

Valid provided that leads at a distance of 8mm from case are kept at ambient temperature.

Parameter

Symbol

R_θJA

Min.

Typ.

Max.

Units

Thermal Resistance Junction to Ambient Air

0.3

K/mW

Forward Voltage at I_F= 100mA

V_F

Valid provided that leads at a distance of 10 mm from case are kept at ambient temperature.

STAD-FEB.10.2009

PAGE . 1

12 3

中文翻译

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BZX55-C11/A52R	NXP	获取价格	11V, 0.4W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35, HERMETIC SEALED, GLASS
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BZX55C110	EIC	获取价格	SILICON ZENER DIODES