BZX55B9V1-TAP

更新时间： 2024-09-15 03:28:23

品牌	Logo	应用领域
威世 - VISHAY		测试二极管齐纳二极管
页数	文件大小	规格书
6页	53K
描述
Zener Diode, 9.1V V(Z), 2%, 0.5W,

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中文翻译

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数据手册
替代型号

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BZX55B9V1-TAP 数据手册

BZX55B...

Vishay Telefunken

Silicon Epitaxial Planar Z–Diodes

Features

Very sharp reverse characteristic

Low reverse current level

Low noise

Very high stability

Available with tighter tolerances

V –tolerance ± 2%

94 9367

Applications

Voltage stabilization

Order Instruction

Type

Ordering Code

Remarks

BZX55B2V4

BZX55B2V4–TAP

Ammopack

Absolute Maximum Ratings

T = 25 C

Parameter

Power dissipation

Z–current

Junction temperature

Storage temperature range

Test Conditions

Type

Symbol

Value

500

Unit

l=4 mm, T =25 C

P /V

175

–65...+175

stg

Maximum Thermal Resistance

T = 25 C

Parameter

Junction ambient

Test Conditions

Symbol

thJA

Value

300

Unit

K/W

l=4 mm, T =constant

Electrical Characteristics

T = 25 C

Parameter

Forward voltage

Test Conditions

I =100mA

Type

Symbol Min

Typ Max Unit

1.5

Document Number 85604

Rev. A4, 12-Mar-01

www.vishay.com

1 (6)

12 3 4 5 6

中文翻译

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BZX55B9V1-TAP 替代型号

型号	品牌	替代类型	描述	数据表
BZX55F9V1-TAP	VISHAY	功能相似	Zener Diode, 9.1V V(Z), 3%, 0.5W,
BZX55A9V1-TAP	VISHAY	功能相似	Zener Diode, 9.1V V(Z), 1%, 0.5W,

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