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BZV55-B3V0 PDF预览

BZV55-B3V0

更新时间: 2024-11-12 22:27:11
品牌 Logo 应用领域
威世 - VISHAY 二极管齐纳二极管测试
页数 文件大小 规格书
7页 298K
描述
ZENER DIODES

BZV55-B3V0 技术参数

生命周期:ObsoleteReach Compliance Code:unknown
风险等级:5.82配置:SINGLE
二极管类型:ZENER DIODE最大动态阻抗:95 Ω
元件数量:1最高工作温度:200 °C
最大功率耗散:0.5 W标称参考电压:3 V
子类别:Voltage Reference Diodes表面贴装:YES
最大电压容差:2%工作测试电流:5 mA

BZV55-B3V0 数据手册

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NEW PRODUCT  
NEW PRODUCT  
NEW PRODUCT  
BZV55 SERIES  
ZENER DIODES  
Mini-MELF  
FEATURES  
Silicon Planar Power Zener Diodes  
For use as low voltage stabilizer or  
Cathode Mark  
voltage reference.  
The Zener voltages are graded according to the  
international E 24 standard. Higher Zener voltages  
and 1% tolerance available on request.  
.019 (0.48)  
.011 (0.28)  
.142 (3.6)  
.134 (3.4)  
Diodes available in these tolerance series:  
±2% BZV55-B, ±3% BZV55-F, ±5% BZV55-C.  
MECHANICAL DATA  
Case: Mini-MELF Glass Case (SOD-80)  
Weight: approx. 0.05 g  
Cathode band color: Blue  
Dimensions are in inches and (millimeters)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25°C ambient temperature unless otherwise specified.  
SYMBOL  
VALUE  
UNIT  
Zener Current see Table “Characteristics”  
Power Dissipation at Tflange = 50°C  
Power Dissipation at TA = 50°C  
Ptot  
Ptot  
Tj  
500  
mW  
mW  
°C  
(1)  
400  
Junction Temperature  
–65 to +200  
–65 to +200  
250  
Storage Temperature Range  
TS  
°C  
Continuous Forward Current  
IF  
mA  
W
(2)  
Peak reverse power disipation (non-repetitive) tp=100µs  
PZSM  
30  
SYMBOL  
RthJA  
RthJL  
VF  
MIN.  
TYP.  
MAX.  
UNIT  
K/mW  
K/mW  
V
(1)  
Thermal Resistance Junction to Ambient Air  
Thermal Resistance Junction to Lead  
Forward Voltage at IF = 10 mA  
0.38  
0.30  
0.9  
NOTES:  
1) Mounted on ceramic substrate 10mm x 10mm x 0.6mm  
2) Tj = 150°C  
9/29/98  

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