BZV55-B3V0T/R

更新时间： 2024-11-14 03:13:55

品牌	Logo	应用领域
恩智浦 - NXP		二极管齐纳二极管
页数	文件大小	规格书
13页	410K
描述
3V, 0.4W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, HERMETIC SEALED, GLASS PACKAGE-2

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数据手册

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BZV55-B3V0T/R 数据手册

BZV55 series

Voltage regulator diodes

Rev. 5 — 26 January 2011

Product data sheet

1. Product profile

1.1 General description

Low-power voltage regulator diodes in small hermetically sealed glass SOD80C

Surface-Mounted Device (SMD) packages. The diodes are available in the normalized

E24 2 % (BZV55-B) and approximately 5 % (BZV55-C) tolerance range.

The series consists of 37 types with nominal working voltages from 2.4 V to 75 V.

1.2 Features and benefits

 Non-repetitive peak reverse power

dissipation:  40 W

 Wide working voltage range:

nominal 2.4 V to 75 V (E24 range)

 Total power dissipation:  500 mW

 Two tolerance series: 2 % and 5 %

 Low differential resistance

 Small hermetically sealed glass

SMD package

1.3 Applications

 General regulation functions

1.4 Quick reference data

Table 1.

Quick reference data

Symbol Parameter

Conditions

Min

Typ

Max

0.9

Unit

V_F

forward voltage

I_F= 10 mA

[1]

P_ZSM

non-repetitive peak

reverse power dissipation

[1] t_p= 100 s; square wave; T_j= 25 C prior to surge

2. Pinning information

Table 2.

Pinning

Description

cathode

Simplified outline

Graphic symbol

[1]

anode

006aaa152

[1] The marking band indicates the cathode.

12 3 4 5 6 7...13

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