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BZT55C9V113 PDF预览

BZT55C9V113

更新时间: 2024-11-07 03:47:35
品牌 Logo 应用领域
美台 - DIODES 测试二极管
页数 文件大小 规格书
3页 69K
描述
Zener Diode, 9.1V V(Z), 6.08%, 0.5W, Silicon, Unidirectional, HERMETIC SEALED, GLASS, QUADROMELF-2

BZT55C9V113 技术参数

生命周期:Obsolete零件包装代码:MELF
包装说明:O-LELF-R2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.84
其他特性:LOW NOISE外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:ZENER DIODEJESD-30 代码:O-LELF-R2
元件数量:1端子数量:2
最高工作温度:175 °C最低工作温度:-65 °C
封装主体材料:GLASS封装形状:ROUND
封装形式:LONG FORM极性:UNIDIRECTIONAL
最大功率耗散:0.5 W认证状态:Not Qualified
标称参考电压:9.1 V表面贴装:YES
技术:ZENER端子形式:WRAP AROUND
端子位置:END最大电压容差:6.08%
工作测试电流:5 mABase Number Matches:1

BZT55C9V113 数据手册

 浏览型号BZT55C9V113的Datasheet PDF文件第2页浏览型号BZT55C9V113的Datasheet PDF文件第3页 
BZT55C2V4 - BZT55C75  
500mW SURFACE MOUNT ZENER DIODE  
Features  
·
·
·
·
·
500mW Power Dissipation  
High Stability  
Low Noise  
Outline Similar to JEDEC 213AA  
Hemetic Package  
D
B
A
Mechanical Data  
·
·
Case: QuadroMELF, Glass  
Terminals: Solderable per MIL-STD-202,  
Method 208  
Polarity: Cathode Band  
Marking: Cathode Band Only  
Weight: 0.034 grams (approx.)  
QuadroMELF  
Dim  
A
Min  
3.3  
1.4  
Max  
3.7  
·
·
·
B
1.6  
C
1.7Æ Typical  
0.3 Typical  
D
All Dimensions in mm  
@ TA = 25°C unless otherwise specified  
Maximum Ratings and Electrical Characteristics  
Characteristic  
Symbol  
Pd  
Value  
500  
Unit  
mW  
mA  
K/W  
V
Power Dissipation  
Zener Current  
(Note 1)  
(Note 1)  
(Note 1)  
IZ  
Pd/VZ  
300  
RqJA  
VF  
Thermal Resistance, Junction to Ambient Air  
Forward Voltage  
@ IF = 200mA  
1.5  
Tj, TSTG  
-65 to +175  
°C  
Operating and Storage Temperature Range  
Notes:  
1. Valid provided that electrodes are kept at ambient temperature.  
2. Tested with pulses, Tp £ 100ms.  
DS30006 Rev. C-2  
1 of 3  
BZT55C2V4-BZT55C75  

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