BZT55C75

更新时间： 2024-11-03 22:17:55

品牌	Logo	应用领域
威世 - VISHAY		二极管齐纳二极管
页数	文件大小	规格书
6页	81K
描述
Silicon Epitaxial Planar Z-Diodes

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中文翻译

获取价格

数据手册

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BZT55C75 数据手册

BZT55C...

Vishay Telefunken

Silicon Epitaxial Planar Z–Diodes

Features

Very sharp reverse characteristic

Low reverse current level

Very high stability

Low noise

Available with tighter tolerances

96 12009

Applications

Voltage stabilization

Absolute Maximum Ratings

T = 25 C

Parameter

Power dissipation

Z–current

Junction temperature

Storage temperature range

Test Conditions

300K/W

Type

Symbol

Value

500

Unit

thJA

P /V

175

–65...+175

stg

Maximum Thermal Resistance

T = 25 C

Parameter

Test Conditions

Symbol

thJA

Value

500

Unit

K/W

Junction ambient on PC board 50mmx50mmx1.6mm

Electrical Characteristics

T = 25 C

Parameter

Forward voltage

Test Conditions

I =200mA

Type

Symbol Min

Typ Max Unit

1.5

Document Number 85601

Rev. 3, 01-Apr-99

www.vishay.de • FaxBack +1-408-970-5600

1 (6)

12 3 4 5 6

中文翻译

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