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BZT55C5V1 PDF预览

BZT55C5V1

更新时间: 2024-09-13 12:33:27
品牌 Logo 应用领域
TYSEMI 二极管测试
页数 文件大小 规格书
3页 207K
描述
500mW Power Dissipation Low reverse current level Very high stability Low noise

BZT55C5V1 数据手册

 浏览型号BZT55C5V1的Datasheet PDF文件第2页浏览型号BZT55C5V1的Datasheet PDF文件第3页 
Product specification  
BZT55C5V1  
Features  
LL-34  
Unit: mm  
500mW Power Dissipation  
Low reverse current level  
Very high stability  
2.64REF  
0.50  
0.35  
1.50  
1.30  
Low noise  
Ideal for Surface Mountted Application  
3.60  
3.30  
Absolute Maximum Ratings Ta = 25℃  
Parameter  
Power Dissipation  
Symbol  
PD  
Rating  
500  
Unit  
mW  
V
(Note 1)  
(Note 1)  
Forward Voltage @ IF = 200mA  
Thermal Resistance, Junction to Ambient Air  
Operating and Storage Temperature Range  
VF  
1.5  
RθJA  
Tj, TSTG  
300  
/W  
-65 to +175  
Notes: 1. Valid provided that electrodes are kept at ambient temperature.  
Electrical Characteristics Ta = 25℃  
Zener Voltage Range  
(Note 2)  
Maximum Zener  
Impedance  
Maximum Reverse  
Current  
Type  
VZ @ IZT  
IR  
@
VR  
IZT  
ZZT @ IZT  
ZZK @ IZK  
IZK  
Nom (V) Min (V) Max (V)  
mA  
5
mA  
1
V
1
μA  
Ω
Ω
BZT55C5V1  
5.1  
4.8  
5.4  
60  
550  
0.1  
Notes: 2. Tested with pulses, Tp 100ms.  
http://www.twtysemi.com  
1 of 3  
sales@twtysemi.com  
4008-318-123  

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