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BZT52H-B13 PDF预览

BZT52H-B13

更新时间: 2024-11-09 06:45:03
品牌 Logo 应用领域
恩智浦 - NXP 二极管齐纳二极管测试光电二极管
页数 文件大小 规格书
13页 119K
描述
Single Zener diodes in a SOD123F package

BZT52H-B13 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:PLASTIC PACKAGE-2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.39
配置:SINGLE二极管元件材料:SILICON
二极管类型:ZENER DIODEJESD-30 代码:R-PDSO-F2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性:UNIDIRECTIONAL
最大功率耗散:0.375 W认证状态:Not Qualified
标称参考电压:13 V表面贴装:YES
技术:ZENER端子面层:TIN
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:30最大电压容差:2.31%
工作测试电流:5 mABase Number Matches:1

BZT52H-B13 数据手册

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BZT52H series  
Single Zener diodes in a SOD123F package  
Rev. 3 — 7 December 2010  
Product data sheet  
1. Product profile  
1.1 General description  
General-purpose Zener diodes in a SOD123F small and flat lead Surface-Mounted  
Device (SMD) plastic package.  
1.2 Features and benefits  
„ Total power dissipation: 830 mW  
„ Wide working voltage range: nominal  
„ Low differential resistance  
„ AEC-Q101 qualified  
2.4 V to 75 V (E24 range)  
„ Small plastic package suitable for  
surface-mounted design  
1.3 Applications  
„ General regulation functions  
1.4 Quick reference data  
Table 1.  
Quick reference data  
Symbol Parameter  
Conditions  
IF = 10 mA  
Tamb 25 °C  
Min  
Typ  
Max  
0.9  
Unit  
V
[1]  
[2]  
[3]  
VF  
forward voltage  
total power dissipation  
-
-
-
-
-
-
Ptot  
375  
830  
mW  
mW  
[1] Pulse test: tp 300 μs; δ ≤ 0.02.  
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard  
footprint.  
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.  
2. Pinning information  
Table 2.  
Pinning  
Pin  
1
Description  
cathode  
Simplified outline  
Graphic symbol  
[1]  
2
anode  
1
2
2
1
006aaa152  
[1] The marking bar indicates the cathode.  

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