Datasheet > BZT03-C68/A52R

BZT03-C68/A52R

更新时间： 2022-01-24 10:11:00

品牌	Logo	应用领域
其他 - ETC		稳压二极管
页数	文件大小	规格书
9页	50K
描述
ZENER DIODE 3.0W 68V

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数据手册

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BZT03-C68/A52R 数据手册

Philips Semiconductors

Product speciﬁcation

Voltage regulator diodes

BZT03 series

REVERSE

CURRENT at

STAND-OFF

VOLTAGE

REVERSE

BREAKDOWN

VOLTAGE

TEMPERATURE

COEFFICIENT

TEST

CURRENT

CLAMPING

VOLTAGE

TYPE

NUMBER

V_(BR)R(V)

at I_test

at I_RSM

(A)

note 1

S_Z(%/K) at I_test

V_(CL)R(V)

MAX.

I_R(µA)

I_test

(mA)

at V_R

(V)

MIN.

MAX.

168

188

208

228

251

280

310

340

370

400

440

480

0.09

0.13

249

276

305

336

380

419

459

498

537

603

655

707

1.2

150

160

180

200

220

240

270

300

330

360

390

430

BZT03-C180

BZT03-C200

BZT03-C220

BZT03-C240

BZT03-C270

BZT03-C300

BZT03-C330

BZT03-C360

BZT03-C390

BZT03-C430

BZT03-C470

BZT03-C510

1.1

1.0

0.9

0.8

0.72

0.65

0.60

0.56

0.50

0.45

0.42

Note

1. Non-repetitive peak reverse current in accordance with “IEC 60-1, Section 8” (10/1000 µs pulse); see Fig.4.

THERMAL CHARACTERISTICS

SYMBOL

R_{th j-tp}

PARAMETER

CONDITIONS

lead length = 10 mm

note 1

VALUE

UNIT

K/W

thermal resistance from junction to tie-point

thermal resistance from junction to ambient

R_{th j-a}

100

Note

1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.6.

For more information please refer to the “General Part of associated Handbook”.

1996 Jun 11

1...3 4 567 8 9

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