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BZT03-C68/A52R PDF预览

BZT03-C68/A52R

更新时间: 2024-01-08 08:25:12
品牌 Logo 应用领域
其他 - ETC 稳压二极管
页数 文件大小 规格书
9页 50K
描述
ZENER DIODE 3.0W 68V

BZT03-C68/A52R 数据手册

 浏览型号BZT03-C68/A52R的Datasheet PDF文件第3页浏览型号BZT03-C68/A52R的Datasheet PDF文件第4页浏览型号BZT03-C68/A52R的Datasheet PDF文件第5页浏览型号BZT03-C68/A52R的Datasheet PDF文件第6页浏览型号BZT03-C68/A52R的Datasheet PDF文件第8页浏览型号BZT03-C68/A52R的Datasheet PDF文件第9页 
Philips Semiconductors  
Product specification  
Voltage regulator diodes  
BZT03 series  
GRAPHICAL DATA  
MBH534  
MBH535  
4
10  
4
handbook, halfpage  
handbook, halfpage  
P
tot  
P
(W)  
ZSM  
(W)  
3
3
10  
2
1
0
2
10  
10  
10  
2  
1  
0
100  
200  
10  
1
t (ms) 10  
p
T (°C)  
Solid line: tie-point temperature; lead length = 10 mm.  
Tj = 25 °C prior to surge.  
Dotted line: ambient temperature; PCB mounted as shown in Fig 6.  
Fig.3 Maximum non-repetitive peak reverse  
power dissipation as a function of pulse  
duration (square pulse).  
Fig.2 Maximum total power dissipation as a  
function of temperature.  
MBH536  
I
3
handbook, halfpage  
RSM  
handbook, halfpage  
(%)  
I
F
100  
90  
(A)  
2
50  
1
0
10  
t
t
1
0
1
2
V
(V)  
t
MGD521  
F
2
In accordance with “IEC 60-1, Section 8”.  
t1 = 10 µs.  
Tj = 25 °C.  
t2 = 1000 µs.  
Fig.4 Non-repetitivepeakreversecurrent  
pulse definition.  
Fig.5 Forward current as a function of forward  
voltage; typical values.  
1996 Jun 11  
7

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