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BZM55C2V4 PDF预览

BZM55C2V4

更新时间: 2024-09-17 22:48:39
品牌 Logo 应用领域
威世 - VISHAY 二极管齐纳二极管测试
页数 文件大小 规格书
6页 84K
描述
Silicon Epitaxial Planar Z-Diodes

BZM55C2V4 数据手册

 浏览型号BZM55C2V4的Datasheet PDF文件第2页浏览型号BZM55C2V4的Datasheet PDF文件第3页浏览型号BZM55C2V4的Datasheet PDF文件第4页浏览型号BZM55C2V4的Datasheet PDF文件第5页浏览型号BZM55C2V4的Datasheet PDF文件第6页 
BZM55C...  
Vishay Telefunken  
Silicon Epitaxial Planar Z–Diodes  
Features  
Saving space  
Hermetic sealed parts  
Fits onto SOD 323 / SOT 23 footprints  
Electrical data identical with the devices  
BZT55C... / TZMC...  
Very sharp reverse characteristic  
Low reverse current level  
Very high stability  
96 12315  
Low noise  
Available with tighter tolerances  
Applications  
Voltage stabilization  
Absolute Maximum Ratings  
T = 25 C  
j
Parameter  
Power dissipation  
Z–current  
Junction temperature  
Storage temperature range  
Test Conditions  
300K/W  
Type  
Symbol  
Value  
500  
Unit  
mW  
mA  
C
P
V
R
thJA  
I
Z
P /V  
V
Z
T
175  
–65...+175  
j
T
stg  
C
Maximum Thermal Resistance  
T = 25 C  
j
Parameter  
Test Conditions  
Symbol Value Unit  
Junction ambient mounted on epoxy–glass hard tissue, Fig. 1  
Junction tie point 35 m copper clad, 0.9 mm copper area per electrode  
R
R
thJL  
500  
300  
K/W  
K/W  
thJA  
2
Electrical Characteristics  
T = 25 C  
j
Parameter  
Forward voltage  
Test Conditions  
I =200mA  
Type  
Symbol Min  
Typ Max Unit  
1.5  
V
F
V
F
www.vishay.de FaxBack +1-408-970-5600  
Document Number 85598  
Rev. 3, 01-Apr-99  
1 (6)  

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