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BZD27C10P-M3-08 PDF预览

BZD27C10P-M3-08

更新时间: 2024-11-04 14:41:15
品牌 Logo 应用领域
威世 - VISHAY 测试二极管
页数 文件大小 规格书
7页 101K
描述
Zener Diode, 10V V(Z), 5%, 2.3W,

BZD27C10P-M3-08 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50Factory Lead Time:10 weeks
风险等级:5.15配置:SINGLE
二极管类型:ZENER DIODE最大动态阻抗:4 Ω
JESD-609代码:e3湿度敏感等级:1
元件数量:1最高工作温度:150 °C
峰值回流温度(摄氏度):260最大功率耗散:2.3 W
标称参考电压:10 V子类别:Voltage Reference Diodes
表面贴装:YES端子面层:Matte Tin (Sn)
处于峰值回流温度下的最长时间:30最大电压容差:5%
工作测试电流:50 mABase Number Matches:1

BZD27C10P-M3-08 数据手册

 浏览型号BZD27C10P-M3-08的Datasheet PDF文件第2页浏览型号BZD27C10P-M3-08的Datasheet PDF文件第3页浏览型号BZD27C10P-M3-08的Datasheet PDF文件第4页浏览型号BZD27C10P-M3-08的Datasheet PDF文件第5页浏览型号BZD27C10P-M3-08的Datasheet PDF文件第6页浏览型号BZD27C10P-M3-08的Datasheet PDF文件第7页 
BZD27-M Series  
Vishay Semiconductors  
www.vishay.com  
Zener Diodes with Surge Current Specification  
FEATURES  
• Sillicon planar Zener diodes  
• Low profile surface-mount package  
• Zener and surge current specification  
• Low leakage current  
• Excellent stability  
• High temperature soldering: 260 °C/10 s at  
terminals  
17249  
• ESD capability according to AEC-Q101:  
human body model: > 8 kV  
machine model: > 800 V  
PRIMARY CHARACTERISTICS  
PARAMETER  
VALUE  
UNIT  
• AEC-Q101 qualified  
VZ range nom.  
Test current IZT  
VZ specification  
Int. construction  
3.6 to 200  
5 to 100  
V
• Base P/N-M3 - halogen-free, RoHS-compliant, and  
commercial grade  
mA  
Pulse current  
Single  
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
ORDERING INFORMATION  
DEVICE NAME  
ORDERING CODE  
BZD27C3V6P-M3-08 to BZD27C200P-M3-08  
TAPED UNITS PER REEL  
MINIMUM ORDER QUANTITY  
3000 per 7" reel (8mm tape)  
30 000/box  
50 000/box  
BZD27-M Series  
BZD27C3V6P-M3-18 to BZD27C200P-M3-18 10 000 per 13" reel (8 mm tape)  
PACKAGE  
MOLDING COMPOUND  
FLAMMABILITY RATING  
MOISTURE SENSITIVITY  
LEVEL  
PACKAGE NAME  
WEIGHT  
SOLDERING CONDITIONS  
MSL level 1  
(according J-STD-020)  
DO-219AB (SMF)  
15 mg  
UL 94 V-0  
260 °C/10 s at terminals  
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
SYMBOL  
VALUE  
UNIT  
TL = 80 °C  
TA = 25 °C (1)  
Ptot  
Ptot  
2300  
800  
300  
150  
30  
mW  
mW  
W
Power dissipation  
100 μs square pulse  
10/1000 μs waveform  
PZSM  
PRSM  
RthJL  
Non repetitive peak surge power dissipation (2)  
W
Junction to lead  
K/W  
Mounted on epoxy-glass PCB with  
3 mm x 3 mm Cu pads (40 μm thick)  
Junction to ambient air  
RthJA  
180  
K/W  
Junction temperature  
Tj  
150  
°C  
°C  
°C  
Storage temperature range  
Operating temperature range  
Tstg  
Top  
- 55 to + 150  
- 55 to + 150  
Notes  
(1)  
Mounted on epoxy-glass PCB with 3 mm x 3 mm Cu pads (40 μm thick)  
TJ = 25 °C prior to surge  
(2)  
Rev. 1.4, 06-Mar-13  
Document Number: 85155  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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