Datasheet > BZD27C10P-HE3-18

BZD27C10P-HE3-18

更新时间： 2024-11-04 22:51:27

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	116K
描述
DIODE ZENER 800MW SMF DO219

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中文翻译

获取价格

数据手册

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BZD27C10P-HE3-18 数据手册

BZD27C Series

Vishay Semiconductors

www.vishay.com

Zener Diodes with Surge Current Specification

FEATURES

eSMP^®Series

Available

• Sillicon planar Zener diodes

• Low profile surface-mount package

• Zener and surge current specification

• Low leakage current

• Excellent stability

23018

• Meets MSL level 1, per J-STD-020, LF maximum peak

of 260 °C

23019

SMF (DO-219AB)

• Meets JESD 201 class 2 whisker test

• ESD capability according to AEC-Q101:

human body model: > 8 kV

machine model: > 800 V

LINKS TO ADDITIONAL RESOURCES

3D Models

• Wave and reflow solderable

• AEC-Q101 qualified available

PRIMARY CHARACTERISTICS

• Base P/N-E3 - RoHS-compliant, and commercial grade

PARAMETER

V_Zrange nom.

Test current I_ZT

V_BR

V_WM

P_PPM

VALUE

3.6 to 200

5 to 100

7 to 188

6.2 to 160

150

UNIT

•

Base P/N-HE3 - RoHS-compliant, and AEC-Q101 qualified

°C

• Compatible to SOD-123W package case outline or

SOD-123F and SOD-123FL

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

T_Jmax.

175

V_Zspecification

Circuit configuration

Polarity

Pulse current

Single

Uni-directional

ORDERING INFORMATION

DEVICE NAME

ORDERING CODE

TAPED UNITS PER REEL

MINIMUM ORDER QUANTITY

BZD27C3V6P-E3-08 to BZD27C200P-E3-08

BZD27C3V6P-HE3-08 to BZD27C200P-HE3-08

BZD27C3V6P-E3-18 to BZD27C200P-E3-18

BZD27C3V6P-HE3-18 to BZD27C200P-HE3-18

3000 per 7" reel (8 mm tape)

MOQ = 30K

BZD27C Series

10 000 per 13" reel (8 mm tape)

MOQ = 50K

PACKAGE

MOLDING COMPOUND MOISTURESENSITIVITY WHISKER TEST

PACKAGE NAME WEIGHT

SOLDERING CONDITIONS

FLAMMABILITY RATING

LEVEL

ACC. JESD 201

MSL level 1

(according J-STD-020)

SMF (DO-219AB)

15 mg

UL 94 V-0

class 2

Peak temperature max. 260 °C

ABSOLUTE MAXIMUM RATINGS (T_amb= 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

VALUE

2300

800

300

150

UNIT

K/W

T_L= 105 °C

T_A= 30 °C ⁽¹⁾

P_tot

Power dissipation

100 μs square pulse

10/1000 μs waveform

P_ZSM

P_RSM

R_thJL

Non repetitive peak surge power dissipation ⁽²⁾

Junction to lead

Mounted on epoxy-glass PCB with

3 mm x 3 mm Cu pads (≥ 40 μm thick)

Junction to ambient air

R_thJA

180

K/W

Junction temperature

Storage temperature range

Operating temperature range

T_j

T_stg

T_op

175

-65 to +175

°C

Notes

(1)

Mounted on epoxy-glass PCB with 3 mm x 3 mm Cu pads (≥ 40 μm thick)

T_J= 25 °C prior to surge

(2)

Rev. 2.0, 26-Feb-2021

Document Number: 85153

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7

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与BZD27C10P-HE3-18相关器件

型号	品牌	获取价格	描述	数据表
BZD27C10P-M	VISHAY	获取价格	Zener Diodes with Surge Current Specification
BZD27C10P-M08	VISHAY	获取价格	DIODE 10 V, 0.8 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-219AB, HALOGEN FREE
BZD27C10P-M18	VISHAY	获取价格	DIODE 10 V, 0.8 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-219AB, HALOGEN FREE
BZD27C10P-M3-08	VISHAY	获取价格	Zener Diode, 10V V(Z), 5%, 2.3W,
BZD27C10P-TP	MCC	获取价格	Zener Diode, 10V V(Z), 5%, 0.8W, Silicon, Unidirectional, ROHS COMPLIANT, PLASTIC PACKAGE-
BZD27C10PV	RECTRON	获取价格	Package / Case : SOD-123F(L)-1;Mounting Style : SMT/SMD;Zener Voltage Vz (V) : 10 V;Zener
BZD27C10T/R	PHILIPS	获取价格	Zener Diode, 10V V(Z), 5%, 2.3W,
BZD27-C10T/R	NXP	获取价格	DIODE 300 W, UNIDIRECTIONAL, SILICON, TVS DIODE, Transient Suppressor
BZD27C10TRL	YAGEO	获取价格	Zener Diode, 10V V(Z), 2.3W, Silicon, Unidirectional
BZD27C11	YAGEO	获取价格	Zener Diode, 11V V(Z), 2.3W, Silicon, Unidirectional

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