Datasheet > BYW29EX-150

BYW29EX-150

更新时间： 2024-09-26 22:25:55

品牌	Logo	应用领域
恩智浦 - NXP		二极管
页数	文件大小	规格书
6页	51K
描述
Rectifier diodes ultrafast, rugged

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数据手册

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BYW29EX-150 数据手册

Philips Semiconductors

Product specification

Rectifier diodes

ultrafast, rugged

BYW29EX series

GENERAL DESCRIPTION

QUICK REFERENCE DATA

Glass passivated epitaxial rectifier

diodes in a full pack plastic envelope,

featuring low forward voltage drop,

ultra-fast recovery times, soft recovery

characteristic and guaranteed reverse

surge and ESD capability. They are

intendedforuseinswitchedmodepower

supplies and high frequency circuits in

general where low conduction and

switching losses are essential.

SYMBOL

PARAMETER

MAX.

UNIT

BYW29EX-

150

200

V_RRM

Repetitive peak reverse

voltage

Forward voltage

Forward current

Reverse recovery time

Repetitive peak reverse

current

V_F

0.895

0.2

0.895

0.2

I_F(AV)

t_rr

I_RRM

PINNING - SOD113

PIN CONFIGURATION

SYMBOL

DESCRIPTION

cathode

anode

case

case isolated

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

-150

150

-200

200

V_RRM

V_RWM

V_R

Repetitive peak reverse voltage

Crest working reverse voltage

Continuous reverse voltage

I_F(AV)

Average forward current¹

square wave; δ = 0.5;

T_hs≤ 106 ˚C

sinusoidal; a = 1.57;

_hs≤ 109 ˚C

7.3

11.3

I_F(RMS)

I_FRM

RMS forward current

Repetitive peak forward current t = 25 µs; δ = 0.5;

_hs≤ 106 ˚C

I_FSM

Non-repetitive peak forward

current

t = 10 ms

t = 8.3 ms

sinusoidal; with reapplied

V_RWM(max)

t = 10 ms

I²t

I²t for fusing

0.2

A²s

I_RRM

Repetitive peak reverse current t_p= 2 µs; δ = 0.001

I_RSM

Non-repetitive peak reverse

current

t_p= 100 µs

T_stg

T_j

Storage temperature

Operating junction temperature

-40

150

˚C

1 Neglecting switching and reverse current losses

October 1998

Rev 1.200

12 3 4 5 6

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