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BYW29FSERIES

更新时间: 2024-09-26 23:39:03
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恩智浦 - NXP 整流二极管
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6页 44K
描述
Rectifier diodes ultrafast

BYW29FSERIES 数据手册

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Philips Semiconductors  
Product specification  
Rectifier diodes  
ultrafast  
BYW29F series  
GENERAL DESCRIPTION  
QUICK REFERENCE DATA  
Glass passivated high efficiency  
rectifier diodes in full pack, plastic  
envelopes, featuring low forward  
voltage drop, ultra-fast recovery  
SYMBOL  
PARAMETER  
MAX. MAX. MAX. UNIT  
BYW29F-  
100  
100  
150  
150  
200  
200  
VRRM  
Repetitive peak reverse  
voltage  
Forward voltage  
Forward current  
Reverse recovery time  
V
times  
and  
soft  
recovery  
characteristic. They are intended for  
usein switchedmode power supplies  
and high frequency circuits in general  
where low conduction and switching  
losses are essential.  
VF  
0.895 0.895 0.895  
V
A
ns  
IF(AV)  
8
8
8
trr  
25  
25  
25  
PINNING - SOD100  
PIN CONFIGURATION  
SYMBOL  
PIN  
1
DESCRIPTION  
cathode  
anode  
case  
a
k
2
case isolated  
1
2
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134).  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
-100  
100  
100  
100  
-150  
150  
150  
150  
-200  
200  
200  
200  
VRRM  
VRWM  
VR  
Repetitive peak reverse voltage  
-
-
-
V
V
V
Crest working reverse voltage  
Continuous reverse voltage1  
IF(AV)  
Average forward current2  
square wave; δ = 0.5;  
-
8
A
Ths 106 ˚C  
sinusoidal; a = 1.57;  
hs 109 ˚C  
-
7.3  
A
T
IF(RMS)  
IFRM  
RMS forward current  
Repetitive peak forward current t = 25 µs; δ = 0.5;  
-
-
11.3  
16  
A
A
T
hs 109 ˚C  
IFSM  
Non-repetitive peak forward  
current  
t = 10 ms  
-
-
80  
88  
A
A
t = 8.3 ms  
sinusoidal; with reapplied  
VRWM(max)  
t = 10 ms  
I2t  
Tstg  
Tj  
I2t for fusing  
Storage temperature  
Operating junction temperature  
-
-40  
-
32  
150  
150  
A2s  
˚C  
˚C  
1 Ths 141˚C for thermal stability.  
2 Neglecting switching and reverse current losses  
October 1994  
1
Rev 1.100  

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