Datasheet > BYW29G200

BYW29G200

更新时间： 2024-09-26 22:11:23

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		二极管快恢复二极管功效快速恢复二极管
页数	文件大小	规格书
5页	66K
描述
HIGH EFFICIENCY FAST RECOVERY DIODES

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中文翻译

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数据手册

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BYW29G200 数据手册

BYW29G-200

HIGH EFFICIENCY FAST RECOVERY DIODES

MAIN PRODUCT CHARACTERISTICS

I_F(AV)

V_RRM

trr

8 A

200 V

35 ns

0.85 V

V_F

FEATURES AND BENEFITS

VERY SMALL CONDUCTION LOSSES

NEGLIGIBLESWITCHING LOSSES

LOW FORWARD AND REVERSE RECOVERY

TIMES

HIGH SURGE CURRENT

SMD

D²PAK

(Plastic)

DESCRIPTION

Single rectifiersuited for switchmodepower supply

and high frequencyDC to DC converters.

Packagedin a surfacemount packageD²PAK, this

device is intended for use in high frequency in-

verters,free wheeling andpolarity protectionappli-

cations.

ABSOLUTE MAXIMUM RATINGS

Symbol

V_RRM

Parameter

Repetitivepeak reverse voltage

RMS forward current

Value

200

Unit

I_F(RMS)

I_F(AV)

Average forward current

Tc=120°C

= 0.5

I_FSM

Surge non repetitiveforward current

(All pins connected)

tp=10ms

sinusoidal

I_FRM

Repetitivepeak forward current

tp = 5 µs

f = 5 kHz

Tstg

Storage and junction temperature range

- 40 to + 150

°C

October 1999 - Ed: 2

1/5

12 3 4 5

中文翻译

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BYW29-xxx	VISHAY	获取价格	Ultrafast Rectifier
BYW30-100	NXP	获取价格	DIODE 12.5 A, 100 V, SILICON, RECTIFIER DIODE, DO-4, METAL PACKAGE-1, Rectifier Diode
BYW30-100	PHILIPS	获取价格	Rectifier Diode, 1 Element, 12A, 100V V(RRM),
BYW30-100U	NXP	获取价格	DIODE 12.5 A, 100 V, SILICON, RECTIFIER DIODE, DO-4, METAL PACKAGE-1, Rectifier Diode
BYW30-150	NXP	获取价格	DIODE 12.5 A, 150 V, SILICON, RECTIFIER DIODE, DO-4, METAL PACKAGE-1, Rectifier Diode
BYW30-150U	NXP	获取价格	DIODE 12.5 A, 150 V, SILICON, RECTIFIER DIODE, DO-4, METAL PACKAGE-1, Rectifier Diode
BYW30-200	NXP	获取价格	DIODE 12.5 A, 200 V, SILICON, RECTIFIER DIODE, DO-4, METAL PACKAGE-1, Rectifier Diode
BYW30-200	PHILIPS	获取价格	Rectifier Diode, 1 Element, 12A, 200V V(RRM),