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BYW29EX-200 PDF预览

BYW29EX-200

更新时间: 2024-01-29 22:08:27
品牌 Logo 应用领域
恩智浦 - NXP 二极管局域网超快软恢复二极管快速软恢复二极管
页数 文件大小 规格书
6页 51K
描述
Rectifier diodes ultrafast, rugged

BYW29EX-200 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:PLASTIC, FULL PACK-2Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.63应用:ULTRA FAST SOFT RECOVERY
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.3 VJESD-30 代码:R-PSFM-T2
JESD-609代码:e3最大非重复峰值正向电流:88 A
元件数量:1相数:1
端子数量:2最高工作温度:150 °C
最大输出电流:8 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
参考标准:IEC-134最大重复峰值反向电压:200 V
最大反向电流:10 µA最大反向恢复时间:0.025 µs
表面贴装:NO端子面层:Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

BYW29EX-200 数据手册

 浏览型号BYW29EX-200的Datasheet PDF文件第2页浏览型号BYW29EX-200的Datasheet PDF文件第3页浏览型号BYW29EX-200的Datasheet PDF文件第4页浏览型号BYW29EX-200的Datasheet PDF文件第5页浏览型号BYW29EX-200的Datasheet PDF文件第6页 
Philips Semiconductors  
Product specification  
Rectifier diodes  
ultrafast, rugged  
BYW29EX series  
GENERAL DESCRIPTION  
QUICK REFERENCE DATA  
Glass passivated epitaxial rectifier  
diodes in a full pack plastic envelope,  
featuring low forward voltage drop,  
ultra-fast recovery times, soft recovery  
characteristic and guaranteed reverse  
surge and ESD capability. They are  
intendedforuseinswitchedmodepower  
supplies and high frequency circuits in  
general where low conduction and  
switching losses are essential.  
SYMBOL  
PARAMETER  
MAX.  
MAX.  
UNIT  
BYW29EX-  
150  
150  
200  
200  
VRRM  
Repetitive peak reverse  
voltage  
Forward voltage  
Forward current  
Reverse recovery time  
Repetitive peak reverse  
current  
V
VF  
0.895  
8
25  
0.2  
0.895  
8
25  
0.2  
V
A
ns  
A
IF(AV)  
trr  
IRRM  
PINNING - SOD113  
PIN CONFIGURATION  
SYMBOL  
PIN  
1
DESCRIPTION  
cathode  
anode  
case  
k
1
a
2
2
case isolated  
1
2
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134).  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
-150  
150  
150  
150  
-200  
200  
200  
200  
VRRM  
VRWM  
VR  
Repetitive peak reverse voltage  
-
-
-
V
V
V
Crest working reverse voltage  
Continuous reverse voltage  
IF(AV)  
Average forward current1  
square wave; δ = 0.5;  
Ths 106 ˚C  
-
8
A
sinusoidal; a = 1.57;  
hs 109 ˚C  
T
-
-
-
7.3  
11.3  
16  
A
A
A
IF(RMS)  
IFRM  
RMS forward current  
Repetitive peak forward current t = 25 µs; δ = 0.5;  
T
hs 106 ˚C  
IFSM  
Non-repetitive peak forward  
current  
t = 10 ms  
-
-
80  
88  
A
A
t = 8.3 ms  
sinusoidal; with reapplied  
VRWM(max)  
t = 10 ms  
I2t  
I2t for fusing  
-
-
-
32  
0.2  
0.2  
A2s  
A
A
IRRM  
Repetitive peak reverse current tp = 2 µs; δ = 0.001  
IRSM  
Non-repetitive peak reverse  
current  
tp = 100 µs  
Tstg  
Tj  
Storage temperature  
Operating junction temperature  
-40  
-
150  
150  
˚C  
˚C  
1 Neglecting switching and reverse current losses  
October 1998  
1
Rev 1.200  

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