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BYV32-150 PDF预览

BYV32-150

更新时间: 2024-01-10 11:12:57
品牌 Logo 应用领域
恩智浦 - NXP 整流二极管高压局域网超快恢复二极管高压超快恢复二极管快速恢复二极管
页数 文件大小 规格书
6页 36K
描述
Rectifier diodes ultrafast

BYV32-150 技术参数

生命周期:Active零件包装代码:TO-220TX
包装说明:S-MSIP-P3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.83应用:FAST RECOVERY
配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:S-MSIP-P3
最大非重复峰值正向电流:80 A元件数量:2
相数:1端子数量:3
封装主体材料:METAL封装形状:SQUARE
封装形式:IN-LINE认证状态:Not Qualified
最大重复峰值反向电压:150 V最大反向恢复时间:0.035 µs
表面贴装:NO端子形式:PIN/PEG
端子位置:SINGLE

BYV32-150 数据手册

 浏览型号BYV32-150的Datasheet PDF文件第2页浏览型号BYV32-150的Datasheet PDF文件第3页浏览型号BYV32-150的Datasheet PDF文件第4页浏览型号BYV32-150的Datasheet PDF文件第5页浏览型号BYV32-150的Datasheet PDF文件第6页 
Philips Semiconductors  
Product specification  
Rectifier diodes  
ultrafast  
BYV32 series  
GENERAL DESCRIPTION  
QUICK REFERENCE DATA  
Glass passivated high efficiency dual  
rectifier diodes in a plastic envelope,  
featuring low forward voltage drop,  
ultra-fast recovery times and soft  
recovery characteristic. They are  
intended for use in switched mode  
power supplies and high frequency  
circuits in general where low  
conduction and switching losses are  
essential.  
SYMBOL  
PARAMETER  
MAX. MAX. MAX. UNIT  
BYV32-  
100  
100  
150  
150  
200  
200  
VRRM  
Repetitive peak reverse  
voltage  
Forward voltage  
Output current (both  
diodes conducting)  
Reverse recovery time  
V
VF  
IO(AV)  
0.85  
20  
0.85  
20  
0.85  
20  
V
A
trr  
25  
25  
25  
ns  
PINNING - TO220AB  
PIN CONFIGURATION  
SYMBOL  
PIN  
1
DESCRIPTION  
anode 1 (a)  
tab  
a1  
a2  
2
cathode (k)  
anode 2 (a)  
3
k
tab cathode (k)  
1 2 3  
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134).  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
-100  
100  
100  
100  
-150  
150  
150  
150  
-200  
200  
200  
200  
VRRM  
VRWM  
VR  
Repetitive peak reverse voltage  
Crest working reverse voltage  
Continuous reverse voltage  
-
-
-
V
V
V
IO(AV)  
Output current (both diodes  
conducting)1  
square wave  
-
20  
A
δ = 0.5; Tmb 115 ˚C  
sinusoidal  
-
18  
A
a = 1.57; Tmb 118 ˚C  
IO(RMS)  
IFRM  
RMS forward current  
-
-
28  
20  
A
A
Repetitive peak forward current t = 25 µs; δ = 0.5;  
per diode  
Tmb 115 ˚C  
IFSM  
Non-repetitive peak forward  
current per diode  
t = 10 ms  
-
-
125  
137  
A
A
t = 8.3 ms  
sinusoidal; with reapplied  
VRWM(max)  
I2t  
Tstg  
Tj  
I2t for fusing  
Storage temperature  
Operating junction temperature  
t = 10 ms  
-
-40  
-
78  
150  
150  
A2s  
˚C  
˚C  
1 Neglecting switching and reverse current losses  
October 1994  
1
Rev 1.100  

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