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BYV32-150HE3/45

更新时间： 2024-02-16 04:20:36
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
5页 144K
描述
DIODE ARRAY GP 150V 18A TO220AB

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中文翻译

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BYV32-150HE3/45 数据手册

 浏览型号BYV32-150HE3/45的Datasheet PDF文件第2页浏览型号BYV32-150HE3/45的Datasheet PDF文件第3页浏览型号BYV32-150HE3/45的Datasheet PDF文件第4页浏览型号BYV32-150HE3/45的Datasheet PDF文件第5页 
BYV32-xxx, BYVF32-xxx, BYVB32-xxx  
www.vishay.com  
Vishay General Semiconductor  
Dual Common-Cathode Ultrafast Rectifier  
FEATURES  
TO-220AB  
ITO-220AB  
• Power pack  
• Glass passivated pallet chip junction  
• Ultrafast recovery time  
• Low switching losses, high efficiency  
• Low forward voltage drop  
• High forward surge capability  
3
3
2
2
1
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
245 °C (for TO-263AB package)  
1
BYV32 Series  
BYVF32 Series  
PIN 1  
PIN 2  
CASE  
PIN 1  
PIN 2  
• Solder dip 275 °C max. 10 s, per JESD 22-B106  
(for TO-220AB and ITO-220AB package)  
PIN 3  
PIN 3  
TO-263AB  
K
• AEC-Q101 qualified  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
2
TYPICAL APPLICATIONS  
1
BYVB32 Series  
For use in high frequency rectifier of switching mode  
power supplies, inverters, freewheeling diodes, DC/DC  
converters, and other power switching application.  
PIN 1  
K
PIN 2  
HEATSINK  
MECHANICAL DATA  
Case: TO-220AB, ITO-220AB, TO-263AB  
Molding compound meets UL 94 V-0 flammability rating  
PRIMARY CHARACTERISTICS  
IF(AV)  
18 A  
Base P/N-E3  
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified  
-
RoHS-compliant, commercial grade  
VRRM  
IFSM  
trr  
50 V to 200 V  
150 A  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix  
25 ns  
VF  
0.85 V  
meets JESD 201 class 2 whisker test  
TJ max.  
150 °C  
TO-220AB, ITO-220AB,  
TO-263AB  
Polarity: As marked  
Package  
Mounting Torque: 10 in-lbs max.  
Diode variations  
Common cathode  
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL BYV32-50 BYV32-100 BYV32-150 BYV32-200  
UNIT  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
70  
150  
105  
150  
200  
140  
200  
V
V
V
A
Maximum DC blocking voltage  
Maximum average forward rectified current at TC = 125 °C  
100  
IF(AV)  
18  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load per diode  
IFSM  
TJ, TSTG  
VAC  
150  
A
°C  
V
Operating storage and temperature range  
-65 to +150  
1500  
Isolation voltage (ITO-220AB only)  
from terminal to heatsink t = 1 min  
Revision: 20-Feb-15  
Document Number: 88558  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
12345

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