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BYV27-100-TR PDF预览

BYV27-100-TR

更新时间: 2024-10-29 13:06:03
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
4页 46K
描述
DIODE 2 A, 100 V, SILICON, RECTIFIER DIODE, DO-204AP, ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2, Rectifier Diode

BYV27-100-TR 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:DO-204
包装说明:E-LALF-W2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:1.03
Is Samacsys:N其他特性:LOW LEAKAGE CURRENT
应用:ULTRA FAST RECOVERY外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.88 V
JEDEC-95代码:DO-204APJESD-30 代码:E-LALF-W2
JESD-609代码:e2湿度敏感等级:1
最大非重复峰值正向电流:50 A元件数量:1
相数:1端子数量:2
最高工作温度:175 °C最低工作温度:-55 °C
最大输出电流:2 A封装主体材料:GLASS
封装形状:ELLIPTICAL封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:100 V最大反向恢复时间:0.025 µs
子类别:Rectifier Diodes表面贴装:NO
技术:AVALANCHE端子面层:Tin/Silver (Sn/Ag)
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

BYV27-100-TR 数据手册

 浏览型号BYV27-100-TR的Datasheet PDF文件第2页浏览型号BYV27-100-TR的Datasheet PDF文件第3页浏览型号BYV27-100-TR的Datasheet PDF文件第4页 
BYV27/...  
Vishay Telefunken  
Ultra Fast Silicon Mesa Rectifiers  
Features  
Controlled avalanche characteristic  
Low forward voltage  
Ultra fast recovery time  
Glass passivated junction  
Hermetically sealed package  
Applications  
94 9539  
Very fast rectifier e.g. for switch mode power supply  
Absolute Maximum Ratings  
T = 25 C  
j
Parameter  
Peak reverse voltage,  
non repetitive  
Test Conditions  
Type  
Symbol  
Value  
55  
110  
165  
220  
50  
100  
150  
200  
50  
Unit  
V
V
V
V
V
V
V
V
BYV27/50  
BYV27/100  
BYV27/150  
BYV27/200  
BYV27/50  
BYV27/100 V =V  
BYV27/150 V =V  
BYV27/200 V =V  
V
RSM  
V
RSM  
V
RSM  
V
RSM  
Reverse voltage  
=Repetitive peak reverse voltage  
V =V  
R
RRM  
RRM  
RRM  
RRM  
R
R
R
Peak forward surge current  
t =10ms,  
I
A
p
FSM  
half sinewave  
Repetitive peak forward current  
Average forward current  
I
I
15  
2
A
A
FRM  
FAV  
Pulse energy in avalanche mode, I  
non repetitive  
=0.6A, T =175 C  
E
R
20  
mJ  
(BR)R  
j
(inductive load switch off)  
Junction and storage  
temperature range  
T =T  
–65...+175  
C
j
stg  
Maximum Thermal Resistance  
T = 25 C  
j
Parameter  
Junction ambient  
Test Conditions  
Symbol  
Value  
45  
100  
Unit  
K/W  
K/W  
l=10mm, T =constant  
R
thJA  
R
thJA  
L
on PC board with spacing 25mm  
Document Number 86042  
Rev. 2, 24-Jun-98  
www.vishay.de FaxBack +1-408-970-5600  
1 (4)  

BYV27-100-TR 替代型号

型号 品牌 替代类型 描述 数据表
BYV27-100-TAP VISHAY

完全替代

Ultra-Fast Avalanche Sinterglass Diode
GPP20A-E3/54 VISHAY

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DIODE GEN PURP 50V 2A DO204AC
SBYV27-100-E3/54 VISHAY

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DIODE 2 A, 100 V, SILICON, RECTIFIER DIODE, DO-204AC, ROHS COMPLIANT, PLASTIC, DO-15, 2 PI

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