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BYV10ED-600P PDF预览

BYV10ED-600P

更新时间: 2024-11-22 01:26:31
品牌 Logo 应用领域
瑞能 - WEEN 超快软恢复二极管快速软恢复二极管局域网超快速软恢复能力电源
页数 文件大小 规格书
10页 714K
描述
Ultrafast power diode

BYV10ED-600P 技术参数

生命周期:Active包装说明:SC-63, DPAK-3/2
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.7应用:ULTRA FAST SOFT RECOVERY POWER
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):2 VJEDEC-95代码:TO-252
JESD-30 代码:R-PSSO-G2最大非重复峰值正向电流:80 A
元件数量:1相数:1
端子数量:2最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE参考标准:IEC-60134
最大重复峰值反向电压:600 V最大反向电流:10 µA
最大反向恢复时间:0.05 µs表面贴装:YES
技术:AVALANCHE端子形式:GULL WING
端子位置:SINGLEBase Number Matches:1

BYV10ED-600P 数据手册

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BYV10ED-600P  
Ultrafast power diode  
4 July 2017  
Product data sheet  
1. General description  
Enhanced ultrafast power diode in a TO252 (DPAK) plastic package.  
2. Features and benefits  
High thermal cycling performance  
Soft recovery characteristic  
Low on-state losses  
Surface-mountable package  
Low thermal resistance  
Enhanced avalanche energy capability  
3. Applications  
Dual Mode (DCM and CCM) PFC  
Power Factor Correction (PFC) for Interleaved Topology  
4. Quick reference data  
Table 1. Quick reference data  
Symbol Parameter  
Conditions  
Values  
Unit  
Absolute maximum rating  
VRRM  
IF(AV)  
IFRM  
repetitive peak reverse  
voltage  
600  
10  
20  
70  
80  
V
A
A
A
average forward current δ = 0.5 ; square-wave pulse; Tmb ≤ 118 °C;  
Fig. 1; Fig. 2; Fig. 3  
repetitive peak forward δ = 0.5 ; tp = 25 μs; Tmb ≤ 118 °C;  
current  
square-wave pulse  
IFSM  
non-repetitive peak  
forward current  
tp = 10 ms; Tj(init) = 25 °C; sine-wave pulse;  
Fig. 4  
tp = 8.3 ms; Tj(init) = 25 °C; sine-wave pulse;  
A
Symbol Parameter  
Static characteristics  
Conditions  
Min  
Typ  
Max  
Unit  
VF  
forward voltage  
IF = 10 A; Tj = 25 °C; Fig. 6  
IF = 10 A; Tj = 150 °C; Fig. 6  
-
-
1.5  
2
V
V
-
1.6  
Dynamic characteristics  
trr reverse recovery time  
IF = 1 A; VR = 30 V; dIF/dt = 50 A/μs;  
Tj = 25 °C; Fig. 7  
-
-
-
35  
50  
78  
50  
-
ns  
ns  
ns  
IF = 10 A; VR = 200 V; dIF/dt = 200 A/μs;  
Tj = 25 °C; Fig. 7  
IF = 10 A; VR = 200 V; dIF/dt = 200 A/μs;  
Tj = 125 °C; Fig. 7  
-

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