Datasheet > BYV10MD-650P

BYV10MD-650P

更新时间： 2024-04-09 19:00:29

品牌	Logo	应用领域
瑞能 - WEEN		/
页数	文件大小	规格书
10页	456K
描述
Ultrafast power diode in a TO252 (DPAK) plastic package.

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BYV10MD-650P 数据手册

BYV10MD-650P

Ultrafast power diode

Rev.01 - 27 October 2022

Product data sheet

1. General description

Ultrafast power diode in a TO252 (DPAK)

plastic package.

alogen-Free

RoHS

2. Features and beneﬁts

•

Low leakage current

•

Low thermal resistance

Low reverse recovery current

Reduces switching losses in associated MOSFET or IGBT

3. Applications

•

Continuous Current Mode (CCM) Power Factor Correction (PFC)

Half-bridge/full-bridge switched-mode power supplies

4. Quick reference data

Table 1. Quick reference data

Symbol Parameter

Conditions

Notes

Values

Unit

Absolute maximum rating

V_RRM

I_F(AV)

I_FRM

repetitive peak reverse

voltage

650

average forward current δ = 0.5 ; square-wave pulse; T_mb≤ 89 °C;

Fig. 1; Fig. 2; Fig. 3

repetitive peak forward δ = 0.5 ; t_p= 25 μs; T_mb≤ 89 °C;

current

square-wave pulse

I_FSM

non-repetitive peak

t_p= 10 ms; T_j(init)= 25 °C; sine-wave pulse;

forward current

Fig. 4

t_p= 8.3 ms; T_j(init)= 25 °C; sine-wave pulse

Symbol Parameter

Static characteristics

Conditions

Notes Min

Typ

Max

Unit

V_F

forward voltage

I_F= 10 A; T_j= 25 °C; Fig. 6

I_F= 10 A; T_j= 150 °C; Fig. 6

1.90

1.50

2.60

2.20

Dynamic characteristics

t_rrreverse recovery time

I_F= 1 A; V_R= 30 V; dI_F/dt = 200 A/μs;

T_j= 25 °C; Fig. 7

12 3 4 5 6 7...10

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